Description
The AP50N06DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a
Battery protection or in other Switching application.
60V N-Channel Enhancement Mode MOSFET
AP50N06DF General Features
VDS = 60V ID =50 A RDS(ON) < 8.5mΩ @ VGS=10V
Application
Battery protection Load switch
Uninterruptible power supply
Package Marking and Ordering Information Product ID AP50N06DF Pack DFN3*3-8 Marking AP50N06DF XXXX YYYY Qty(PCS) 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Rating 60 ±20 50 31 120 80 40 41 -55 to 150 -55 to 150 35 55 3 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W ℃/W 1 AP50N06DF Rve3.8 臺灣永源微電子科技有限公司
60V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss IS VSD trr Qrr
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current1,5 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=20A , dI/dt=100A/μs , TJ=25℃ VDS=30V , VGS=0V , f=1MHz VDD=30V , VGS=10V , RG=3.3, ID=20A VDS=30V , VGS=10V , ID=18A Conditions VGS=0V , ID=250uA VGS=10V , ID=20A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=0V , VGS=0V , f=1MHz Min. 60 --- --- 1.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 7.1 9.5 --- --- --- --- 1.2 57 8.7 14 16.2 41.2 56.4 16.2 3307 201 151 --- --- 22 72 Max. --- 8.5 12 2.5 1 5 ±100 --- --- --- --- --- --- --- --- --- --- --- 50 1.2 --- --- A V nS nC pF ns nC uA nA ? Unit V mΩ mΩ V AP50N06DF
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=40A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as I
D and IDM , in real applications , should be limited by total power dissipation.
2 臺灣永源微電子科技有限公司 AP50N06DF Rve3.8
60V N-Channel Enhancement Mode MOSFET
AP50N06DF
Typical Characteristics
Fig.1 Typical Output Characteristics Fig.3 Forward Characteristics of Reverse
Fig.5 Normalized VGS(th) vs. TJ
AP50N06DF Rve3.8
Fig.2 On-Resistance v.s Gate-Source
Fig.4 Gate-Charge Characteristics
Fig.6 Normalized RDSON vs. TJ
3
臺灣永源微電子科技有限公司
60V N-Channel Enhancement Mode MOSFET
AP50N06DF
VD S Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
90%
2
L x IA S x 2
BVD SS
BVD SS-VD D
VD D
BVD SS
10%
VG S Td ( o n) Tr To n Td ( o ff) Tf To ff IA S
V GS
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4 臺灣永源微電子科技有限公司 AP50N06DF Rve3.8
60V N-Channel Enhancement Mode MOSFET
Package Mechanical Data
EB2AC2Ref.Min.AA2BB2CC2D2.1000.665.180.400.445.905.30REF6.404.634.479.501.091.357°0°6°0°4.6710.701.211.656.800.2520.1820.1760.3740.0430.0537°6°0.1840.4210.0480.065MillimetersTyp.Max.2.500.100.865.480.600.586.30Min.0.08300.0260.2024.0160.0170.2320.209REF0.268DimensionsInchesTyp.Max.0.0980.0040.0340.2160.0240.0230.248AP50N06DF V1LHDBGDETAIL ACD1EE1V1GHLD1A2V2V1E1L2DETAIL AL2V1V2TO-252
Reel Spectification-TO-252
DEB0P0P2Tt1DimensionsRef.Min.WEFD0D1P0P1P2A015.901.657.401.401.403.907.901.906.8510.452.680.240.1039.8040.0040.20MillimetersTyp.16.001.757.501.501.504.008.002.006.9010.502.78Max.16.101.857.601.601.604.108.102.107.0010.602.880.27Min.0.6260.0650.2910.0550.0550.1540.3110.0750.2700.4110.1050.0090.0041.5671.5751.583InchesTyp.0.6300.0690.2950.0590.0590.1570.3150.0790.2710.4130.109Max.0.6340.0730.2990.0630.0630.1610.3190.0830.2760.4170.1130.011FWAD1AB0A05°P1K0B29BB20AAΦ13Φ3B0K0Tt110P0
5 臺灣永源微電子科技有限公司 AP50N06DF Rve3.8
60V N-Channel Enhancement Mode MOSFET
Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the \ Specification\the APM Microelectronics product that you Intend to use. AP50N06DF
6 臺灣永源微電子科技有限公司
AP50N06DF Rve3.8
AP50N06DF 50A 60V DFN33 - 图文
