Semiconductor device
申请(专利)号： DE112018001627T
5
专利号： DE112018001627T
5 主分类号： H01L27/07
申请权利人： FUJI ELECTRIC
CO., LTD. 公开国代码： DE 优先权国家： JP
摘 要：
A semiconductor device is provided, comprising: a semiconductor substrate comprising a drift region of a first conductivity type; a transistor section provided in the semiconductor substrate; and a neighboring element section
provided in the semiconductor substrate, the neighboring element section and the transistor section being arranged along a predetermined arrangement direction, the transistor section and the neighboring element section both comprising: a base region of a second conductivity type provided over the drift region within the semiconductor substrate, a plurality
Trench portions which are formed from an upper surface of the semiconductor
申请日： 2018-11-15 公开公告日： 2020-01-16
分类号： H01L27/07;
H01L21/336; H01L21/8234; H01L29/06; H01L29/12; H01L29/739; H01L29/78; H01L29/868; H01L29/861 发明设计人： TATSUYA NAITO 申请国代码： DE
优先权： 20171115 JP 2017-220347
摘 要 附 图：
substrate through the base region, extend in an extension direction orthogonal to the arrangement direction on the upper surface of the semiconductor substrate and have a conductive portion which is provided within the trench portions and a first surface-side lifetime control region, which is provided on a lower surface side of the semiconductor substrate
continuously from the transistor section to the neighboring element section and limit a life zer contains, and wherein in the arrangement direction, the first surface-side life control region is provided in a plan view of the semiconductor substrate over the entire transistor section and in a part of the neighboring element section. 主权项：
Halbleitervorrichtung, die Folgendes umfasst:
ein Halbleitersubstrat, das einen Driftbereich eines e
权 利 要 求 说 明 书
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Semiconductor device
