NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LDG TO-252 (DPAK) Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE GS ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Power Dissipation L = 0.1mH TC = 25 °C TC = 100 °C 11 SYMBOL VGS ID IDM EAS PD Tj, Tstg TL LIMITS ±20 12 8 45 60 48 20 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C A mJ W Operating Junction & Storage Temperature Range Lead Temperature (/16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1°C SYMBOL RθJC RθJA RθCS TYPICAL 1 MAXIMUM 3 75 UNITS °C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 25 0.8 12 1.2 2.5 V ±250 nA 25 250 μA A 1 REV 1.0 1 Feb-19-2009 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC P3055LDG TO-252 (DPAK) Halogen-Free & Lead-Free 70 50 16 120 90 Drain-Source On-State 1Resistance Forward Transconductance 1RDS(ON) gfs mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 2222222Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 15V, f = 1MHz 450 200 60 15 2.0 7.0 6.0 6.0 20 5.0 pF nC VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A VDS = 15V, RL = 1Ω ID ? 12A, VGS = 10V, RGS = 2.5Ω nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current Forward Voltage Reverse Recovery Time Reverse Recovery Charge 121IS VSD trr Qrr IF = IS, VGS = 0V 30 0.043 12 1.5 A V nS μC Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2%. Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P3055LDG”, DATE CODE or LOT # REV 1.0 2 Feb-19-2009 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LDG TO-252 (DPAK) Halogen-Free & Lead-Free REV 1.0 3 Feb-19-2009
TO252-P3055LDG
