PHOTOMASK BLANK AND PHOTOMASK
申请(专利)号： JP19890086622
专利号： JPH02264952A 主分类号： G03F1/14
申请权利人： TOPPAN
PRINTING CO LTD 公开国代码： JP 优先权国家： JP
摘 要：
PURPOSE:To form the section after etching to a steeper shape so that finer patterns can be formed by respectively specifying the fluorine concns. in a light shielding layer and antireflecting layer. CONSTITUTION:This photomask blank is formed by laminating the light shielding layer (A) contg. Cr, N, C and F and the antireflecting layer (B) contg. Cr, O, N, C and F on a transparent substrate, such as molten quartz substrate. The element concn. of the F is specified within a 1 to 5wt.% range in the layer A and a 10 to 20wt.% range in the layer B. The layer A may also be formed into the two-layered structure consisting of a film consisting of Cr and N and a film consisting of Cr, N, C and F on this film. 主权项：
申请日： 1989-04-05 公开公告日： 1990-10-29
分类号： G03F1/14;
H01L21/027 发明设计人： HIGUCHI SHOICHI 申请国代码： JP
优先权： 19890405 JP
8662289
摘 要 附 图：
权 利 要 求 说 明 书
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说 明 书
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PHOTOMASK BLANK AND PHOTOMASK
