Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devic

Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor

devices simulation

Du Gang;Liu Xiao-Yan;Han Ru-Qi

【期刊名称】《中国物理：英文版》 【年(卷),期】2006(015)001

【摘要】A two-dimensional (2D) full band self-consistent ensemble Monte Carlo (MC) method for solving the quantum Boltzmann equation, including collision broadening and quantum potential corrections, is developed to extend the MC method to the study of nano-scale semiconductor devices with obvious quantum mechanical (QM) effects. The quantum effects both in real space and momentum space in nano-scale semiconductor devices can be simulated. The effective mobility in the inversion layer of n and p channel MOSFET is simulated and compared with experimental data to verify this method. With this method 50nm ultra thin body silicon on insulator MOSFET are simulated. Results indicate that this method can be used to simulate the 2D QM effects in semiconductor devices including tunnelling effect. 【总页数】5页(177-181) 【

关

键

词

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quantum

mechanical

effect;Monte

Carlo

method;semiconductor device;carrier transport 【作者】Du Gang;Liu Xiao-Yan;Han Ru-Qi