Electronic states and shapes of silicon quantum
dots
Huang Wei-Qi;Miao Xin-Jian;Huang Zhong-Mei;Cheng Han-Qiong;Su Qin
【期刊名称】《中国物理：英文版》 【年(卷),期】2013(022)006
【摘要】A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap.The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces,for example,a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower
than
that
on
the
facet.The
red-shifting
ofthe
photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect.Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect. 【总页数】4页(385-388) 【关键词】
【作者】Huang Wei-Qi;Miao Xin-Jian;Huang Zhong-Mei;Cheng Han-Qiong;Su Qin
【作者单位】Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang
Electronic states and shapes of silicon quantum dots
