GSN4903 Dual-Channel MOS
Group-Semi N/P-Channel Complementary MOSFET
Dec 2016
GENERAL DESCRIPTION
The GSN4903 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of
other applications. Standard Product GSN4903 is Pb-free. GSN4903 is electrically identical. GENERAL FEATURES
PIN CONF IGURATION Package DFN5*6 Pin Configuration (Top View)
N-channel
● VDS =30V,ID =25A
RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
P-channel
● VDS =-30V,ID =-19A
RDS(ON) <24mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● H-bridge ● Inverters
GSN4903
Absolute Maximum Ratings TA=25°C unless
otherwise noted
Symbol VDS ID IDM VGS IAS EAS PD TJ, TSTG
Parameter Max N-channel Max P-channel
-30 -19
-14 -70 ±20 24 29 21
-55 to +150
Unit V A A V A mJ W ℃
Drain-Source Voltage 30 Drain Current -Continuous (TA = 25℃) 25 -Continuous (TA = 70℃) 15 Drain Current - Pulsed 75 (Note 1) Gate-Source voltage ±20 Single Pulse Avalanche Current 14 (Note 1) Single Pulse Avalanche Energy L=0.1mH 10 (Note 1) Power Dissipation - TA = 25℃
21 (Note 2) - TA = 70℃
Operating and Storage Temperature Range -55 to +150 www.groupsemi.com Rev0, 2/10/2024
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GSN4903 Dual-Channel MOS
Thermal Characteristics Symbol
Parameter GSN4903
7 20 32
Min Typ
Unit ℃/W ℃/W ℃/W Max
Unit
Maximum Junction-to-Ambient, t<10s RθJA Maximum Junction-to-Ambient, Steady-State Maximum Junction-to-Lead, Steady-RθJL
State N-Channel Electrical Characteristics Symbol Parameter Conditions Off Characteristics BVDSS IDSS IGSSF IGSSR
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage Static Drain-Source On-Resistance
Forward Transconductance Gate resistance
VGS = 0V, ID = 250μA, TJ = 25℃
VDS = 30V, VGS = 0V -TJ = 55℃
VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
30 - - -
- - - - -
- 1 5 100 -100
V μA μA nA nA
On Characteristics VGS(th) RDS(on) gFS Rg
VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 6A
VGS=0V, VDS=0V, f=1MHz
1.0 - - -
1.8 12 35 15 3.2
3.0 18 45 - -
V mΩ S Ω
Dynamic Characteristics Ciss Coss Crss td(on) tr
td(off) tf
Qg(10V) Qg(4.5V) Qgs Qgd IS ISM VSD trr Qrr
VDS = 15V, VGS = 0V, Input Capacitance
f=1MHz Output Capacitance
Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
- - -
400 45 70 4.5 2.5 14.5 3.5 5.2 2.6 0.8 1.3 - - 0.7 8.5 2.2
- - - - - - - - - - - 25 50 1.0 - -
pF pF pF ns ns ns ns nC nC nC nC A A V ns nC
Switching Characteristics
VDS = 15V, RG = 3Ω, - ID = 6A , VGS = 10V (Note 5, - 6) -
-
VDS = 15V, ID = 6A, - VGS = 0~10V (Note 5, 6) -
- -
- - - - -
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward
VGS = 0V, IS = 1A
Voltage
VGS = 0V, IS =6A dIF/dt Reverse Recovery Time
=100A/μs (Note 5) Reverse Recovery Charge
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Rev0, 2/10/2024
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GSN4903 Dual-Channel MOS
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
www.groupsemi.com Rev0, 2/10/2024
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GSN4903 Dual-Channel MOS
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
www.groupsemi.com Rev0, 2/10/2024
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GSN4903 Dual-Channel MOS
P-Channel Electrical Characteristics Symbol Parameter Off Characteristics BVDSS IDSS IGSSF IGSSR
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage Static Drain-Source On-Resistance
Forward Transconductance Gate resistance
VGS = 0V, ID = -250μA, TJ = 25℃
VDS = -30V, VGS = 0V -TJ = 55℃
VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V
-30 - - -
- - - - -
- -1 -5 100 -100
V μA μA nA nA
Conditions Min Typ Max Unit
On Characteristics VGS(th) RDS(on) gFS Rg
VDS = VGS, ID = 250μA VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A VDS = -5V, ID = -6A
VGS=0V, VDS=0V, f=1MHz
-1.0 -1.8
24 -
38 - 3 - 3.2
-3.0
30 46 - -
V mΩ S Ω
Dynamic Characteristics Ciss Coss Crss td(on) tr
td(off) tf
Qg(10V) Qg(4.5V) Qgs Qgd IS ISM VSD trr Qrr
VDS = -15V, VGS = 0V, Input Capacitance
f=1MHz Output Capacitance
Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge
- - -
1000 175 105 10 31 24 28 18 14 3.2 4.4 - - -0.7 24 30
- - - - - - - - - - - - -25 -1.2 - -
pF pF pF ns ns ns ns nC nC nC nC A A V ns nC
Switching Characteristics
VDS = -15V, RG = 3Ω, - ID = -6A , VGS = -10V (Note - 5, 6) -
-
VDS = -15V, ID = -6A, - VGS =- 0~10V (Note 5, 6) -
- -
- - - - -
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward
VGS = 0V, IS = -1A
Voltage
VGS = 0V, IS =-6A dIF/dt =-Reverse Recovery Time
100A/μs (Note 5) Reverse Recovery Charge
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GSN4903 Rev0 - 图文
