2~8 GHz宽带GaN功率放大器MMIC
王会智;高学邦;刘波;张力江;冯志红
【期刊名称】《电子元件与材料》 【年(卷),期】2016(035)005
【摘要】基于0.25μm GaNHEMT工艺，研制了一款两级拓扑放大结构的2~8 GHz宽带功率放大器MMIC（单片微波集成电路）。MMIC所用GaN HEMT器件结构经过优化，提高了放大器的可靠性和性能；电路采用多极点电抗匹配网络，扩展了放大器的带宽，减小了电路的损耗。测试结果表明，在2~8 GHz测试频带内，在脉冲偏压28 V （脉宽1 ms，占空比30%）时，峰值输出功率大于30 W，功率附加效率大于25%，小信号增益大于24 dB，输入电压驻波比在2.8以下，在6 GHz处的峰值输出功率达到50 W，功率附加效率达到40%；在稳态偏压28 V时，连续波饱和输出功率大于20 W，功率附加效率大于20%。尺寸为4.0 mm×5.0 mm。osed on 0.25 μm GaN HEMT technology, a 2-8 GHz broadband GaN power amplifier MMIC (Monolithic Microwave Integrated Circuit) with two-stage topology was developed.The GaN HEMT device structure of amplifier was optimized to improve performance and reliability, and adopted multi-pole reactance matching network to expand the bandwidth of amplifier and reduce inserting loss of output stage. At frequency of 2.0 GHz to 8.0 GHz, the amplifier delivers a small signal gain larger than 24 dB , input-port VSWR less than 2.8, and a peak saturated output power of 30 W with greater than 25% power-added efficiency at a pulsed drain-source
2~8 GHz宽带GaN功率放大器MMIC
