High voltage ESD power clamp
申请(专利)号： US20060614659
专利号： US7457086B2 主分类号： H02H3/20
申请日： 2006-12-21 公开公告日： 2008-11-25
分类号： H02H3/20;
H02H3/22; H02H9/04 发明设计人： MAHMOUD A.
MOUSA; ROBERT J.
GAUTHIER, JR.; CHRISTOPHER S. PUTNAM; MUJAHID MUHAMMAD;
KIRAN V. CHATTY 申请国代码： US
优先权： 20061221 US
61465906; 20041001 US 71174804
摘 要 附 图：
申请权利人： KIRAN V. CHATTY;
ROBERT J.
GAUTHIER, JR.; MAHMOUD A. MOUSA; MUJAHID MUHAMMAD;
CHRISTOPHER S. PUTNAM 公开国代码： US 优先权国家： US
摘 要：
Method and device for protecting against electrostatic discharge. The method
includes configuring a gate of at least one upper transistor of a transistor network connected between power rails to be biased to a prescribed value, and
coupling an electrostatic discharge event to a gate of a lower transistor of the
transistor network. The at least one upper and at least one lower transistors of the transistor network are respectively
coupled between the power rails from a higher voltage to a lower voltage. 主权项：
1. A method of protecting against electrostatic discharge, comprising:
权 利 要 求 说 明 书
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High voltage ESD power clamp
