Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

Study of 4H-SiC junction barrier Schottky diode

using field guard ring termination

陈丰平;张玉明;吕红亮;张义门;黄建华

【期刊名称】《中国物理：英文版》 【年(卷),期】2010(000)009 【摘要】^10F;中国物理：英文版 【总页数】4页(P.515-518)

【关键词】肖特基二极管;保护环;SiC;势垒;使用领域;PIN二极管;终端;反向特性 【作者】陈丰平;张玉明;吕红亮;张义门;黄建华

【作者单位】School;of;Microelectronics,;Key;Laboratory;of;Wide;Band-Gap;Semiconductor;Materials;and;Devices,;Xidian;University,;Xian;710071,;China 【正文语种】英文 【中图分类】TN311.7 【相关文献】

1.Effects of proton radiation on field limiting ring edge terminations in 4H–SiC junction barrier Schottky diodes [J], SONG QingWen[1,2]; TANG XiaoYan[1,2]; HAN Chao[1,2]; YUAN Hao[1,2]; YANG Shuai[1,2]; He XiaoNing[1,2]; ZHANG YiMeng[1,2]; ZHANG YiMen[1,2]; ZHANG YuMing[1,2]

2.Surface Passivation of Ti/4H-SiC Schottky Barrier Diode [J], Muhammad Khalid; Saira Riaz; Shahzad Naseem

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3.Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode [J], 陈丰平; 张玉明; 吕红亮; 张义门; 郭辉; 郭鑫

4.Characterization of ion-implanted 4H-SiC Schottky barrier diodes [J], 王守国; 张岩; 张义门; 张玉明

5.Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky diodes [J], 陈丰平; 张玉明; 张义门; 吕红亮; 宋庆文

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