应用TWINSCAN平台的ArF浸没式工艺

应用TWINSCAN平台的ArF浸没式工艺

JanMulkens; BobStreefkerk; MartinHoogendorp

【期刊名称】《《集成电路应用》》 【年(卷),期】2005(000)001

【摘要】For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens,we have built a proto-type immersion scanner using TWINSCANTM technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF),while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window.

【总页数】7页(P.72-78)

【关键词】TWINSCAN; ArF浸没; 集成电路; 193纳米工艺