Photoluminescence Properties of Nanocrystalline 3C-SiC Films

Photoluminescence Properties of Nanocrystalline

3C-SiC Films

YU Wei;LU Xue-qin;LU Wan-bing;HAN Li;FU Guang-sheng

【期刊名称】《中国航空学报（英文版）》 【年(卷),期】2006(019)0z1

【摘要】Nanocrystalline (nc) 3C-SiC films on the Si substrate were prepared by the helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique. With the SiH4-CH4 gas flow ratio changing, the films exhibit different photoluminescence (PL) characteristics. Under the stoichiometric condition, the PL peak redshift from 470 nm to 515 nm is detected with the increase of excitation wavelength, which can be attributed to the quantum confinement effect radiation of 3C-SiC nanocrystals of different sizes. However, the appearance of an additional PL band at 436 nm in Si-rich film might be sourced back to the excess of Si defect centers in it. This is also the case for C-rich film for its PL band lying at 570 nm. The results above quoted indicate an important influence of gas flow ratio on the PL properties of the SiC films providing an effective guidance for analyzing the luminescence mechanism and exploring the high-efficiency light emission of the SiC films. 【总页数】5页(215-219)

【关键词】SiC film;photoluminescence;quantum confinement

effect;defect

【作者】YU Wei;LU Xue-qin;LU Wan-bing;HAN Li;FU Guang-sheng 【作者单位】College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science

and

Technology,

Hebei

University,

Baoding

071002,

China;College of Physics Science and Technology, Hebei University, Baoding 071002, China;College of Physics Science and Technology, Hebei University, Baoding 071002, China 【正文语种】中文 【中图分类】V2 【文献来源】

https://www.zhangqiaokeyan.com/academic-journal-cn_chinese-journal-aeronautics_thesis/0201219817438.html 【相关文献】

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