呼吸机专用mos管 AP5N10SI 5A 100V SOT-89 - 图文

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General Description:

100V N-Channel Enhancement Mode MOSFET

The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits.

AP5N10SI

Features:

ΩRDS(ON)<125m @VGS=10V (N-Ch)

RDS(ON)<135m @VGS=4.5V (N-Ch) Ω

Super high density cell design for extremely low

RDS(ON) Exceptional on-resistance and maximum DC current

AP5N10SI XX XXXX

Applications:

Switching power supply, SMPS Battery Powered System DC/DC Converter DC/AC Converter Load Switch

Package Marking and Ordering Information

Product ID AP5N10SI Pack SOT89-3 Marking AP5N10SI YYWWWW Qty(PCS) 1000 Table 1.Absolute Maximum Ratings (TA=25℃) Symbol VDS VGS ID IDM (pluse) PD TJ,TSTG Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Value 100 ±25 5 3.1 20 9.3 -55 To 150 Unit V V A A A W ℃ Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature Table 2.Thermal Characteristic Symbol RJAParameter Thermal Resistance, Junction-to-Ambient Typ - Value 13.5 Unit ℃/W 1

AP5N10SI Rev3.8 臺灣永源微電子科技有限公司

100V N-Channel Enhancement Mode MOSFET

Table 3. Symbol On/Off States BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage AP5N10SI

Max Unit Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Conditions Min Typ VGS=0V ID=250μA VDS=100V,VGS=0V VGS=±20V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID= 10A 100 1 1.5 110 120 100 ±100 3 125 135 V μA nA V m Ωm Ω RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=-5A Dynamic Characteristics 690 120 90 pF pF pF Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V,VGS=0V, f=1.0MHz Switching Times td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V,ID=1A,RL=15 VGS=10V,RG=2.5 11 7.4 35 9.1 15.5 3.2 4.7 20 0.8 nS nS nS nS nC nC nC VDS=15V,ID=10A VGS=10V Source-Drain Diode Characteristics ISD VSD Source-Drain Current(Body Diode) Forward on Voltage(Note 1) VGS=0V,IS=2A A V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 AP5N10SI Rev3.8 臺灣永源微電子科技有限公司

100V N-Channel Enhancement Mode MOSFET

AP5N10SI

Switch Time Test Circuit and Switching Waveforms：

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)

Figure1. Output Characteristics Figure2. Transfer Characteristics

VDS Drain-Source Voltage (V)

Figure3. BVDSS vs Junction Temperature

Figure4. ID vs Junction Temperature

Temperature（℃）

Temperature（℃

AP5N10SI Rev3.8 臺灣永源微電子科技有限公司3

100V N-Channel Enhancement Mode MOSFET