SWITCHING REGULATOR APPLICATION
开关稳压器的应用 Features特征 ? High voltage: BVDDS=800V?? Low gate charge: Qg=40nC (Typ.)?
? Low drain-source On resistance: RDS(on)=1.6? (Max.)?? 100% avalanche tested?
? RoHS compliant device and available in halogen free device?
Ordering Information
Part Number
SMK0780FD
Marking
SMN0780
Package
TO-220F-3L
G D S
TO-220F-3L
Absolute maximum ratings (TC=25?C unless otherwise noted)绝对最大额定值 Characteristic Symbol Rating Unit V Drain-source voltage VDSS 800 ?30 Gate-source voltage VGSS Tc=25?C ID Tc=100?C IDM IAS EAS IAR EAR PD TJ Tstg V A A A A mJ A mJ W ?C ?C Drain current (DC) * 7 4.4 28 7 522 7 4.5 45 150 -55~150 Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range * Limited only maximum junction temperature
Rev. date: 01-JUN-11 KSD-T0O073-000
Thermal Characteristics热特性
Characteristic Symbol Rth(j-c) Rating Unit Thermal resistance, junction to case Max. 2.77 Thermal resistance, junction to ambient Rth(j-a) Max. 62.5 ?C/W Electrical Characteristics (TC=25?C unless otherwise noted)电气特性 Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance BVDSS VGS(th) IDSS IGSS ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=800V, VGS=0V VDS=0V, VGS=?30V VDS=10V, ID=3.5A VDS=25V, VGS=0V, f=1.0MHz 800 3 - - - - - - - - - 5 1 V V uA nA ? ?100 - RDS(ON) VGS=10V, ID=3.5A gfs Ciss 1.28 1.6 Forward transfer conductance (Note 3) Input capacitance 5.6 - 1650 S - Output capacitance Coss Crss - 135 - - pF Reverse transfer capacitance - - 15 Turn-on delay time (Note 3,4) Rise time (Note 3,4) td(on) tr td(off) VDD=400V, ID=7A, 40 - 110 - - Turn-off delay time (Note 3,4) RG=25? - - - - 65 - - - - - ns Fall time (Note 3,4) Gate-source charge (Note 3,4) tf Qg Qgs Qgd VDS=640V, VGS=10V, 70 40 Total gate charge (Note 3,4) 12 nC Gate-drain charge (Note 3,4) ID=7A - 15 Source-Drain Diode Ratings and Characteristics (TC=25?C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS ISM VSD trr Qrr Integral reverse diode in the MOSFET - - - - - - - 7 A A Source current (Pulsed) 28 Forward voltage VGS=0V, IS=7A IS=7A, VGS=0V dIF/dt=100A/us 1.4 - - V ns uC Note:
Reverse recovery time (Note 3,4) Reverse recovery charge (Note 3,4) 560 - 4
1. Repeated rating: Pulse width limited by safe operating area 2. L=20mH, IAS=7A, VDD=50V, RG=25?, Starting TJ=25?C 3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
trical Characteristics Curves电气 特性曲线 Elec
Electrical Characteristics Curves (Continue)
Fig. 7 BVDSS - TJ
1.15
1.10
Fig. 8 RDS(ON) - TJ 3 2.5
2
1.051.00
0.95
※Note:
1.vGS =0V
2.ID =250μs0.90
-50
-25
0
25 50
75
100 125
150175
Junction Temperature, TJ[℃]
Fig. 9 Safe Operating Area 102 Operation in This Area
is Limited by RDS(on) ] 10μs A 100μs [ tn101 1mse rru
C ni 100 DC 10ms ar D , DI10-1
※Note:
1.TC2.T =25
J 3.Single Pulse
=150
10-2
0
10 0
101
102
VDS , Drain-Source Voltage [V]
1.5
1
0.5
※Note:
1.v
GS =0V
2.ID =3.5A
0
-50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ[℃]
Fig. 10 ID - TC 8 ][ 6
DI ,tne rruC 4
n iar D 2
0
25
125
50
75 100
150
Case Temperature, TC [
°C
A
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform