512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory
With 40 MHz or 50 MHz SPI Bus Interface
DATA BRIEF
FEATURES SUMMARY
■■■■■■■■■
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512Kbit to 32Mbit of Flash Memory
Page Program (up to 256 Bytes) in 1.4ms(typical)
Sector Erase (256 Kbit or 512Kbit)Bulk Erase (512Kbit to 32Mbit)2.7 to 3.6V Single Supply VoltageSPI Bus Compatible Serial Interface
40MHz to 50MHz Clock Rate (maximum)Deep Power-down Mode 1μA (typical)Electronic Signatures
–JEDEC Standard Two-Byte Signature
(20xxh)
–RES Instruction, One-Byte, Signature, for
backward compatibility
More than 100000 Erase/Program Cycles perSector
More than 20 Year Data Retention
Figure 1. PackagesVDFPN8 (ME)8x6mm (MLP8)VDFPN8 (MP)(MLP8)Table 1. Product List
Reference
Part Number
M25P32M25P16M25P80
M25Pxx
M25P40M25P20M25P10-AM25P05-A
SO16 (MF)300 mil width81SO8 (MN)150 mil widthOctober 2004
For further information contact your local ST sales office.
M25PXX
SUMMARY DESCRIPTION
The M25Pxx is a 512Kbit to 32Mbit (2M x 8) SerialFlash Memory, with advanced write protectionmechanisms, accessed by a high speed SPI-com-patible bus.
The memory can be programmed 1 to 256 bytes ata time, using the Page Program instruction.
The memory is organized as a number of sectors,each containing 256 or 128 pages. Each page is256 bytes wide.
The whole memory can be erased using the BulkErase instruction, or a sector at a time, using theSector Erase instruction.Figure 2. Logic DiagramVCCFigure 3. SO8 and VDFPN ConnectionsM25PxxSQWVSS12348765AI10259VCCHOLDCDDCSWHOLDM25PxxQNote:1.There is an exposed die paddle on the underside of the
MLP8 package. This is pulled, internally, to VSS, andmust not be allowed to be connected to any other voltageor signal line on the PCB.
Figure 4. SO16 ConnectionsM25PxxHOLDVCCDUDUDUDUSQ12345678161514131211109AI10260VSSAI10258Table 2. Signal Names
CD Q
Serial ClockSerial Data InputSerial Data OutputChip SelectWrite ProtectHold
Supply VoltageGround
CDDUDUDUDUVSSWNote:1.DU = Don’t Use
SWHOLDVCCVSS
M25PXX
M25PXX
Table 3. Instruction Set
Instruction WREN WRDI RDID RDSR WRSR READ
Description
Write EnableWrite DisableRead IdentificationRead Status Register Write Status Register Read Data Bytes
One-byte Instruction Code
0000 01100000 01001001 11110000 01010000 00010000 00110000 10110000 00101101 10001100 01111011 10011010 1011
06h04h9Fh05h01h03h0Bh02hD8hC7hB9hABh
Address
Bytes
0 0 0 0 0 33330 0 00
Dummy Bytes
0 0 0 0 0 0 10 00 0
Data Bytes0 0 1 to 31 to ∞1 1 to ∞1 to ∞1 to 256
00 0
FAST_READ Read Data Bytes at Higher Speed
PP
Page Program
EraseSE Sector BE DP RES
Bulk Erase Deep Power-down
Release from Deep Power-down,
and Read Electronic SignatureRelease from Deep Power-down
∞3 1 to 0
0
Table 4. Status Register Format
b7SRWD
0 b0
0 BP2 BP1 BP0 WEL WIP
Status Register
Write Protect
Block Protect BitsWrite Enable Latch Bit
Write In Progress Bit
M25PXX
PART NUMBERING
Table 5. Ordering Information Scheme
Example:
Device Type
M25P = Serial Flash Memory for Code StorageDevice Function32 = 32Mbit (4M x 8)16 = 16Mbit (2M x 8)80 = 8Mbit (1M x 8)40 = 4Mbit (512K x 8)20 = 2Mbit (256K x 8)10-A = 1Mbit (128K x 8)05-A = 512Kbit (64K x 8)Operating VoltageV = VCC = 2.7 to 3.6V
Package
ME = VDFPN8 8x6mm (MLP8)MP = VDFPN8 (MLP8)MF = SO16 (300 mil width)MN = SO8 (150 mil width)
Device Grade
6 = Industrial temperature range, –40 to 85 °C.Device tested with standard test flow
3 = Device tested with High Reliability Certified Flow1.Automotive temperature range (–40 to 125 °C)Option
blank = Standard PackingT = Tape and Reel Packing
Plating Technology
blank = Standard SnPb plating
P = Lead-Free and RoHS compliant
G = Lead-Free, RoHS compliant, Sb2O3-free and TBBA-free
Note:1.ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Cer-tified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.
M25P80–VMP6TP
For a list of available options (speed, package,etc.) or for further information on any aspect of thisdevice, please contact your nearest ST Sales Of-fice.