SEMICONDUCTOR DEVICE
申请(专利)号： JP20120230367
专利号： JP2014082391A 主分类号： H01L29/786
申请权利人： SEMICONDUCTO
R ENERGY LAB CO LTD
公开国代码： JP 优先权国家： JP
摘 要：
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device using an oxide semiconductor by inhibiting variation in electrical
characteristics of the semiconductor device.;SOLUTION: In a semiconductor device, by supplying oxygen to a base insulation layer arranged under an oxide lamination including an oxide
semiconductor layer and a gate insulation
申请日： 2012-10-17 公开公告日： 2014-05-08
分类号： H01L29/786;
H01L21/336; H01L21/28; H01L29/41; H01L29/417; H01L21/8242; H01L27/108; H01L27/115; H01L21/8247; H01L29/788; H01L29/792; H01L21/363; G09F9/30 发明设计人： TANAKA
TETSUHIRO;
SUZAWA HIDEOMI; YAMAZAKI SHUNPEI; SASAGAWA SHINYA 申请国代码： JP
优先权： 20121017 JP
2012230367
摘 要 附 图：
layer arranged above the oxide lamination to a channel formation region, possible oxygen deficiency to be formed in a channel region is compensated. A cross section of the oxide lamination is formed into a shape including a curved surface. In addition, by inhibiting oxygen
abstraction from the oxide semiconductor layer by a source electrode layer or a drain electrode layer near the channel region formed in the oxide semiconductor layer, oxygen deficiency in the channel region is inhibited. Further, by forming a protective insulation layer functioning as a barrier layer which has a low hydrogen content and a low oxygen permeability on the gate electrode layer, oxygen
desorption from the gate insulation layer and/or the base insulation layer is inhibited thereby to effectively supply oxygen to the channel formation region.;COPYRIGHT: (C)2014,JPO&INPIT 主权项：
酸素を含有する下地絶縁層と、
前記下地絶縁層上に設けられた島状の酸化物積層と、
前記島状の酸化物積層の上面の一部及びチャネル形成方向の側面と接する第１のソース電極層及び第１のドレイン電極
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SEMICONDUCTOR DEVICE
