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MEMORY存储芯片PMN70XPE,115中文规格书 - 图文 

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Nexperia

PMSTA05; PMSTA06

500 mA NPN general-purpose transistors

7.Characteristics

Table 8.Characteristics

Tamb=25°C unless otherwise specified.SymbolParameterICBO

collector-base cut-offcurrentPMSTA05PMSTA06

IEBOhFEVCEsatVBEsatVBEfT

[1]

ConditionsMinTypMaxUnit

VCB=60V;IE=0AVCB=80V;IE=0AVEB=3V; IC=0AVCE=2V; IC=10mAVCE=1V; IC=100mA

[1][1]

---5050---100

-----

100100500--250

nAnAnA

emitter-base cut-offcurrentDCcurrent gaincollector-emitter saturation voltagebase-emitter

saturationvoltagebase-emitter voltagetransition frequency

IC=100mA; IB=10mAIC=100mA; IB=10mA

IC=100mA; VCE=1VVCE=2V; IC=10mA; f=100MHz

mVmVVMHz

[1]

---

9001.2-

Pulse test: tp≤300μs; δ≤0.02.

8.Test information

8.1Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9.Package outline

2.21.830.450.151.10.82.21.352.01.15120.40.30.250.1004-11-041.3Dimensions in mmFig 1.PMSTA05_06

Package outline SOT323(SC-70)All information provided in this document is subject to legal disclaimers.

? Nexperia B.V. 2017. All rights reserved

Product data sheetRev. 3 — 22 July 2010 4 of 9

PMSTA05; PMSTA06

500 mA NPN general-purpose transistors

Rev. 3 — 22 July 2010

Product data sheet

1.Product profile

1.1General description

NPN general-purpose transistors in a SOT323(SC-70) very small Surface-Mounted

Device(SMD) plastic package.

Table 1.Product overview

PackageNexperia

JEITASC-70

PMSTA55PMSTA56

SOT323

PNP complement

Type numberPMSTA05PMSTA06

1.2Features and benefits

??High current(max. 500mA)??Collector-emitter voltage:

??60V (PMSTA05)??80V (PMSTA06)??AEC-Q101 qualified

??Very small SMD plastic package

1.3Applications

??Primarily intended for telephony and professional communication equipment

1.4Quick reference data

Table 2.VCEO

Quick reference data

Conditionsopen base

---VCE=2V; IC=10mAVCE=1V; IC=100mA

[1]

SymbolParameter

collector-emitter voltagePMSTA05PMSTA06

IChFE

collector currentDCcurrent gain

MinTyp-----

Max6080500--

UnitVVmA

5050

[1]

Pulse test: tp≤300μs; δ≤0.02.

MEMORY存储芯片PMN70XPE,115中文规格书 - 图文 

NexperiaPMSTA05;PMSTA06500mANPNgeneral-purposetransistors7.CharacteristicsTable8.CharacteristicsTamb=25°Cunlessotherwisespecified.SymbolParameterICBO
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