High fill factor over 82%enabled by a biguanide doping electron transporting layer in plan

High fill factor over 82%enabled by a biguanide doping electron transporting layer in planar

perovskite solar cells

Ru GE[1];Fei QIN[1];Lin HU[1];Sixing XIONG[1];Yinhua ZHOU[1];

【期刊名称】《中国光电子学前沿：英文版》 【年(卷),期】2018(011)004

【摘要】N-type doping in electron transport materials is an effective way to improve the electron collection and enhance the performance of the perovskite solar cells (PSCs).Here,for the first time,an antibiotic and antimicrobial compound of 1-(o-Tolyl)biguanide (oTb) is used to dope the electron transport material of phenyl- C61-butyric acid methyl ester (PCBM).The oTh doping into the PCBM can increase the conductivity and reduce the work function of the PCBM.The oTb doping can significantly enhance the fill factor (FF)of the perovskite solar cells with the structure of glass/ITO/NiO]MAPbI3/(oTb)PCBM/(PEIE)/Ag.For the cells without PEIE (polyethylenimine ethoxylated)coating,the oTb doping increases the FF from 0.57 to 0.73.S-shaped of the current density-voltage (J-V)characteristic under illumination is removed after the oTb doping.For the cells with PEIE coating between the (oTb)PCBM and Ag,the oTb doping increases the FF from 0.70 to 0.82.These results show the potential of the oTb as an n-dopant in the applications of perovskite solar cells.