SEMICONDUCTOR MEMORY DEVICE HAVING HIGH-VOLTAGE GENERATOR

SEMICONDUCTOR MEMORY DEVICE HAVING HIGH-VOLTAGE GENERATOR

申请(专利)号： KR20070032051

专利号： KR100885491B1 主分类号： G11C5/14 申请权利人： 公开国代码： KR 优先权国家： KR

摘 要：

The invention of the effective data to prevent the level drop of the external voltage due to the generation of the high-potential voltage window to secure a , intended to provide a semiconductor memory device capable of high-speed operation , by detecting the level of the high potential voltage relative to the reference voltage level - level detection means for outputting a detection signal ; The level - signal and the detection signal is received a refresh drive - drive control means for generating a control signal ; The driving- first voltage supply means for supplying the control signal in response to the high-potential voltage by charge pumping the external voltage at a

predetermined interval ; And the level - detection signal in response to a charge pumping the external voltage at regular intervals to provide a semiconductor memory device and a second voltage supply means for supplying the high-potential voltage

申请日： 2007-03-31 公开公告日： 2009-02-24

分类号： G11C5/14 发明设计人： ??? 申请国代码： KR

优先权： 20070331 KR

20070032051

摘 要 附 图：

主权项：

????? ?? ?????? ??? ???? ??-????? ???? ?? ?? ????;/n?? ??-????? ??????? ???? ??-????? ???? ?? ?? ???

权 利 要 求 说 明 书

【SEMICONDUCTOR MEMORY DEVICE HAVING HIGH-VOLTAGE GENERATOR】的权利说明书内容是......请下载后查看