Characteristics and threshold voltage model of GaN-based FinFET with recessed gate

Characteristics and threshold voltage model of

GaN-based FinFET with recessed gate

Chong Wang;Xiao-Hua Ma;Jin-Cheng Zhang;Yue Hao;Xin Wang;Xue-Feng Zheng;Yun Wang;Yun-Long He;Ye Tian;Qing He;Ji Wu;Wei Mao

【期刊名称】《中国物理：英文版》 【年(卷),期】2018(027)009

【摘要】In this work,AlGaN/GaN FinFETs with different fin widths have been successfully fabricated,and the recessed-gate FinFETs are fabricated for comparison.The recessed-gate FinFETs exhibit higher transconductance

value

and

positive

shift

of

threshold

voltage.Moreover,with the fin width of the recessed-gate FinFETs increasing,the variations of both threshold voltage and the transconductance increase.Next,transfer characteristics of the recessed-gate FinFETs with different fin widths and recessed-gate depths are simulated by Silvaco software.The relationship between the threshold voltage and the AlGaN layer thickness has been investigated.The simulation results indicate that the slope of threshold voltage variation reduces with the fin width decreasing.Finally,a simplified threshold voltage model for recessed-gate FinFET is established,which agrees with both the experimental results and simulation results. 【总页数】6页(609-614) 【关键词】