micron镁光nand命名规则 Standard NAND Flash Part Numbering System
Micron's part numbering system is available at Standard NAND Flash*
MT 29F 2G 08 A A A WP - xx xx xx xx ES : A Micron Technology Design Revision (shrink) A = 1st design revision
1. Single-Supply Flash
29F = Single-Supply NAND Flash Production Status 29H = High Speed NAND Blank = Production ES = Engineering samples
2. Density QS = Qualification samples
1G = 1Gb MS = Mechanical samples 2G = 2Gb
4G = 4Gb Operating Temperature Range
8G = 8Gb Blank = Commercial (0°C to +70°C) 16G = 16Gb ET = Extended (–40°C to +85°C) 32G = 32Gb WT = Wireless (–25°C to +85°C) 64G = 64Gb
128G = 128Gb Block Option (Reserved for use) 256G = 256Gb Blank = Standard device
3. Device Width Flash Performance
08 = 8 bits Blank = Full specification 16 = 16 bits
4. Speed Grade (MT29H Only)
Classification 15 = 133 MT/s 12 = 166 MT/s
5. Mark Bit/cell Die RnB
A SLC 1 1 Package Code
B SLC 2 1 WP = 48-pin TSOP I (CPL version) (Pb-free) C SLC 2 1 WC = 48-pin TSOP I (OCPL version) (Pb-free) D SLC 2 2 H1 = 100-ball VFBGA (Pb-free), 12 x 18 x 1.0 E SLC 2 2 H2 = 100-ball TFBGA (Pb-free), 12 x 18 x 1.2 F SLC 4 2 HC = 63-ball VFBGA, 10.5 x 13 x 1.0
G SLC 4 2 C2 = 52-pad ULGA, 12 x 17 x 0.4 (use TBD) J SLC 4 + 4 2 + 2 C3 = 52-pad ULGA, 12 x 17 x 0.65
K SLC 8 4 C4 = 52-pad VLGA, 12 x 17 x 1.0 (SDP/DDP/QDP) Z SLC 1 NA C5 = 52-pad VLGA, 14 x 18 x 1.0 (SDP/DDP/QDP)
C6 = 52-pad LLGA, 14 x 18 x 1.47 (8DP, QDP, DDP) M MLC 1 1 C7 = 48-pad LLGA, 12 x 20 x 1.47 (8DP)
N MLC 2 1 SWC = 48-pin Stacked TSOP (OCPL version) (Pb-free) P MLC 2 1 SWP = 48-pin Stacked TSOP (CPL version) (Pb-free) Q MLC 2 2
R MLC 2 2 Generation (M29 only)/Feature Set T MLC 4 2 A = 1st set of device features
U MLC 4 2 B = 2nd set of device features (rev only if different than 1st set)
V MLC 4 + 4 2 + 2 C = 3rd set of device features (rev only if different) W MLC 8 4 D = 4th set of device features (rev only if different) Y MLC 8 4 etc.
6. Operating Voltage Range
A = 3.3V (2.70–3.60V), VccQ 3.3V (2.70–3.60V) B = 1.8V (1.70–1.95V)
C = 3.3V (2.70–3.60V), VccQ 1.8V (1.70–1.95V)
*Contact Micron for help differentiating between standard and next-generation NAND offerings
(完整版)micron镁光nand命名规则
