2014-AlGaN-GaN异质结构场效应晶体管的I-V特性研究 - 修改版解读

学号：

14101601173

毕业设计（论文）

题 目：

AlGaN-GaN异质结场效应晶体管的I-V特性研究

作 者 学 院 指导老师 完成时间

彭坤 物理与电子学院

文于华

届 别 专 业 职 称 2014.05

2014 电子科学与技术

讲师

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摘要

GaN基电子器件最重要的代表之一是AlGaN/GaN异质结场效应晶体管，这是因为它具有高饱和电流、比较高的跨导和较高的截止频率与很高的击穿电压等独特的物理性质。该论文正是以AlGaN/GaN异质结的基本物理特性作为研究基础来研究AlGaN/GaN异质结构场效应晶体管的I-V特性。在考虑到AlGaN/GaN异质结中的自发极化与压电极化效应的物理现象基础上，采用二维物理分析模型计算AlGaN/GaN HEMT 器件的I-V特性，得到了较满意的结果。

关键词：AlGaN/GaN;I-V特性;场效应晶体管,截止频率。

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Abstract

One of the most important electronic device representative of the GaN-based AlGaN / GaN heterostructure field effect transistor, because it has a high saturation currents and high transconductance and a high cutoff frequency of the high breakdown voltage, and other unique physical properties. The paper is the basic physical characteristics of AlGaN / GaN heterostructures as a research foundation to study the IV characteristics of AlGaN / GaN heterostructure field-effect transistor. Basic physical phenomena of spontaneous polarization and piezoelectric polarization effects, taking into account the AlGaN / GaN heterostructures on the analysis of two-dimensional physical model AlGaN / GaN HEMT device IV characteristics obtained satisfactory results.

Keywords: AlGaN / GaN; IV characteristics; field-effect transistor, the cutoff frequency.

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