Silicon nanowire ratioed inverters on bendable
substrates
Jeongje Moon;Yoonjoong Kim;Doohyeok Lim;Kyeungmin Im;Sangsig Kim
【期刊名称】《纳米研究（英文版）》 【年(卷),期】2018(011)005
【摘要】In this study, we demonstrate the performance of silicon nanowire (SiNW) n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be controlled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80％ and 96％, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics. 【总页数】6页(2586-2591) 【关键词】
【作者】Jeongje Moon;Yoonjoong Kim;Doohyeok Lim;Kyeungmin Im;Sangsig Kim
【作者单位】Department of Electrical Engineering, Korea University, 145Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;LED PKG
Silicon nanowire ratioed inverters on bendable substrates
