32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)
3V supply Flash memory
Features
??Supply voltage
–VCC = 2.7V to 3.6V for Program, Erase andRead
–VPP =12V for Fast Program (optional)??Access times: 70, 90ns
??Programming time
–10μs per byte/word typical
–Double word/ Quadruple byte Program??Memory Blocks
–Memory Array: 63 Main Blocks–8 Parameter Blocks (Top or BottomLocation)??Erase Suspend and Resume modes
–Read and Program another Block duringErase Suspend??Unlock Bypass Program command
–Faster Production/Batch Programming??VPP/WP pin for fast Program and Write Protect??Temporary Block Unprotection mode??Common Flash Interface–64 bit Security code
??Extended memory Block
–Extra block used as security block or tostore additional information??Low power consumption
–Standby and Automatic Standby??100,000 Program/Erase cycles per block??Electronic signature
–Manufacturer code: 0020h
–Top Device code M29W320ET: 2256h–Bottom Device code M29W320EB: 2257h??RoHS? packages available
FBGATSOP48 (N)12 x 20 mmBGATFBGA48 (ZE)6 x 8 mmFBGA64 (ZS)11 x 13 mmCommon Flash Interface (CFI)M29W320ET, M29W320EB
Appendix B Common Flash Interface (CFI)
The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure is read from the memory. Table23, Table24, Table25, Table26, Table27 and Table28 show the addresses used to retrieve the data.
The CFI data structure also contains a security area where a 64 bit unique security number is written (see Table28: Security code area). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by Numonyx. Table 23.
Query Structure Overview(1)
Address
Sub-section name
x1610h1Bh27h40h61h
x820h36h4Eh80hC2h
CFI Query Identification StringSystem Interface InformationDevice Geometry Definition
Primary Algorithm-specific extended Query tableSecurity code area
Command set ID and algorithm data offsetDevice timing & voltage informationFlash device layout
Additional information specific to the Primary Algorithm (optional)64 bit unique device number
Description
1.Query data are always presented on the lowest order data outputs.
Table 24.
Address
CFI Query Identification String(1)
Data
x1610h11h12h13h14h15h16h17h18h19h1Ah
x820h22h24h26h28h2Ah2Ch2Eh30h32h34h
0051h0052h0059h0002h0000h0040h0000h
DescriptionValue“Q”
Query unique ASCII string \\\
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm
Address for Primary Algorithm extended query table (see Table27)
AMDCompatibleP = 40h
0000h Alternate Vendor Command Set and Control Interface ID code second 0000h vendor - specified algorithm supported 0000h0000h
Address for Alternate Algorithm extended Query table
NA
NA
1.Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
M29W320ET, M29W320EBCommon Flash Interface (CFI)
Common Flash Interface (CFI)Table 26.
Device Geometry Definition(1)
M29W320ET, M29W320EB
Address
Data
x1627h28h29h2Ah2Bh2Ch2Dh 2Eh2Fh 30h31h 32h33h 34h
x84Eh50h52h54h56h58h5Ah5Ch5Eh60h62h64h66h68h
0016h0002h0000h0000h0000h0002h0007h0000h0020h0000h003Eh0000h0000h0001h
Device Size = 2n in number of bytesFlash Device Interface code description
4 Mbytex8, x16Async.
Description
Value
Maximum number of bytes in multi-byte program or page = 2n NANumber of Erase Block regions. It specifies the number of regions containing contiguous Erase Blocks of the same size. Region 1 information
Number of Erase Blocks of identical size = 0007h+1Region 1 information
Block size in Region 1 = 0020h * 256 byte
Region 2 information
Number of Erase Blocks of identical size = 003Eh+1Region 2 information
Block size in region 2 = 0100h * 256 byte
288Kbyte6364Kbyte
1.For the M29W320EB, Region 1 corresponds to addresses 000000h to 007FFFh and Region 2 to addresses 008000h to
1FFFFFh. For the M29W320ET, Region 1 corresponds to addresses 1F8000h to 1FFFFFh and Region 2 to addresses000000h to 1F7FFFh.
Table 27.Primary Algorithm-specific extended Query table
Data
Description
Value\
Primary Algorithm extended Query table unique ASCII string “PRI”
\\
Major version number, ASCIIMinor version number, ASCIIAddress Sensitive Unlock (bits 1 to 0)00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
Erase Suspend
00 = not supported, 01 = Read only, 02 = Read and WriteBlock Protection
00 = not supported, x = number of blocks in per groupTemporary Block Unprotect
00 = not supported, 01 = supportedBlock Protect /Unprotect04 = M29W320E
\\Yes
Addressx1640h41h42h43h44h45h
x880h82h84h86h88h8Ah
0050h0052h0049h0031h0031h0000h
46h47h48h49h
8Ch8Eh90h92h
0002h0001h0001h0004h
21Yes04
M29W320ET, M29W320EBTable 27.
Common Flash Interface (CFI)
Primary Algorithm-specific extended Query table (continued)
Data
Description
Simultaneous operations, 00 = not supportedBurst mode, 00 = not supported, 01 = supported
Page mode, 00 = not supported, 01 = 4 page word, 02 = 8 page wordVPP Supply Minimum Program/Erase voltagebit 7 to 4 HEX value in voltsbit 3 to 0 BCD value in 100 mV
VPP Supply Maximum Program/Erase voltagebit 7 to 4 HEX value in voltsbit 3 to 0 BCD value in 100 mV
Top/Bottom Boot Block Flag
02h = Bottom Boot device, 03h = Top Boot device
ValueNoNoNo11.5V
Addressx164Ah4Bh4Ch4Dh
x894h96h98h9Ah
0000h0000h0000h00B5h
4Eh9Ch00C5h0002h0003h
12.5V
4Fh9Eh
–
Table 28.Security code area
Data
Description
Addressx1661h62h63h64h
x8C3h, C2hC5h, C4hC7h, C6hC9h, C8h
XXXXXXXXXXXXXXXX
64 bit: unique device number
MEMORY存储芯片M29W320EB70N6E中文规格书 - 图文
