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MEMORY存储芯片ADM3232EARUZ-REEL7中文规格书 - 图文

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FEATURES

Data rate: 460 kbps 2 Tx and 2 Rx

Meets EIA-232E specifications 0.1 μF charge pump capacitors

ESD protection to IEC 1000-4-2 (801.2) on RS-232 I/Os Contact discharge: ±8 kV Air gap discharge: ±15 kV

APPLICATIONS

General-purpose RS-232 data link Portable instruments Handsets

Industrial/telecom diagnostic ports

GENERAL DESCRIPTION

The ADM3232E transceiver is a high speed, 2-channel RS-232/V.28 interface device that operates from a single 3.3 V power supply. Low power consumption makes it ideal for battery-powered portable instruments. The ADM3232E conforms to the EIA-232E and ITU-T V.28 specifications and operates at data rates up to 460 kbps.

All RS-232 (TxOUT and RxIN) inputs and outputs are protected against electrostatic discharges (up to ±15 kV ESD protection). This ensures compliance with IEC 1000-4-2 requirements. This device is ideally suited for operation in electrically harsh environments or where RS-232 cables are frequently plugged/ unplugged, with the ±15 kV ESD protection of the ADM3232E RS-232 input/output pins.

ADM3232E

FUNCTIONAL BLOCK DIAGRAM

+3.3V INPUTADM3232EC10.1μF+C1++3.3V TO +6.6VVCCC1–VOLTAGEC3+10VDOUBLERV++0.1μFC50.1μFC2C2++6.6V TO –6.6VV–6.3V0.1μF+C2–VOLTAGEC410VINVERTER+0.1μF10VT1INT1T1OUTTTL/CMOSINPUTS

RS-232OUTPUTST2INT2T2OUTR1OUTR1R1INTTL/CMOS5k?RS-232OUTPUTS

INPUTS*R2OUTR2R2IN5k?GND10*INTERNAL 5k? PULL-DOWN RESISTOR0-01 ON EACH RS-232 INPUT.460Figure 1.

Emissions are also controlled to within very strict limits. CMOS technology is used to keep the power dissipation to an absolute minimum, allowing maximum battery life in portable applications. Four external 0.1 μF charge pump capacitors are used for the voltage doubler/inverter, permitting operation from a single 3.3 V supply.

The ADM3232E is available in a 16-lead narrow and wide SOIC packages, as well as a space-saving 16-lead TSSOP.

ADM3232E

SPECIFICATIONS

VCC = 3.3 V ± 0.3 V, C1 to C4 = 0.1 μF; all specifications TMIN to TMAX, unless otherwise noted. Table 1.

Parameter

DC CHARACTERISTICS

Operating Voltage Range VCC Power Supply Current LOGIC

Input Logic Threshold Low, VINL Input Logic Threshold High, VINH TTL/CMOS Output Voltage Low, VOL TTLCMOS Output Voltage High, VOH Logic Pull-Up Current

Transmitter Input Hysteresis RS-232 RECEIVER

Input Voltage Range Input Threshold Low Input Threshold High Input Hysteresis Input Resistance RS-232 TRANSMITTER

Output Voltage Swing (RS-232) Output Voltage Swing (RS-562) Transmitter Output Resistance Output Short-Circuit Current (RS-232) TIMING CHARACTERISTICS Maximum Data Rate Receiver Propagation Delay tPHL tPLH

Transmitter Propagation Delay Receiver Output Enable Time Receiver Output Disable Time Transmitter Skew Receiver Skew

Transition Region Slew Rate ESD PROTECTION (RS-232 I/O PINS)

±15 ±15 ±8

kV kV kV

Human body model

IEC 1000-4-2 air discharge

IEC 1000-4-2 contact discharge

Min 3.0

Typ 3.3 1.3

Max 5.5 3 0.8

2.0

0.4

VCC ? 0.6

5 0.5

?30 0.6

10

Unit V mA V V V V μA V V V V V kΩ V V Ω mA kbps

VCC = 3.3 V, all transmitter outputs loaded with 3 kΩ to ground VCC = 3.0 V

VCC = 0 V, VOUT = ±2 V Test Conditions/Comments

No load TIN TIN

IOUT = 1.6 mA IOUT = ?1 mA TIN = GND to VCC

+30

1.2 1.6 0.4 5 ±5.2

2.4 7

3 ±5.0 ±3.7 300

±15

460

VCC = 3.3 V, RL = 3 kΩ to 7 kΩ, CL = 50 pF to 1000 pF, one Tx switching

5.5

0.4 0.4 300 200 200 30 300 10

1 1 1.2

30

μs μs μs ns ns ns ns V/μs

RL = 3 kΩ, CL = 1000 pF

Measured from +3 V to ?3 V or ?3 V to +3 V, VCC = 3.3 V; RL = 3 kΩ, CL = 1000 pF, TA = 25°C

Rev. B | Page 3 of 12

ADM3232E

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted. Table 2.

ParameterVCC V+V?

Input Voltages TxIN RxIN

Output Voltages TxOUTRxOUT

Short-Circuit Duration TxOUT

Power Dissipation R-16/RW-16 (Derate 6 mW/°C Above 50°C) θJA, Thermal Impedance Power Dissipation RU-16

(Derate 6 mW/°C Above 50°C) θJA, Thermal Impedance Operating Temperature Range Industrial (A Version)

Storage Temperature Range Lead Temperature (Soldering, 10 sec)

Rating

?0.3 V to +6 V

(VCC ? 0.3 V) to 14 V +0.3 V to –14 V ?0.3 V to (VCC + 0.3 V) ±30V

±15V

?0.3 V to (VCC + 0.3 V) Continuous450 mW 158°C/W 500 mW 158°C/W

?40°C to +85°C ?65°C to +150°C

JEDEC industry-standard J-STD-020

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. B | Page 4 of 12

ADM3232E

TYPICAL PERFORMANCE CHARACTERISTICS

8642TxOUT (V)8TxOUT (HIGH)6V+420–2–4–6–8TxOUT (LOW)V+, V– (V)0–2–4V––606410-0030200400600800LOAD CAPACITANCE (pF)1000120002468LOAD CURRENT (mA)1012Figure 3. Transmitter Output Voltage High/Low vs.

Load Capacitance @ 460 kbps

8642TxOUT HIGHFigure 6. Charge Pump V+, V? vs. Load Current

350300V+ (IMPEDANCE)250IMPEDANCE (?)TxOUT (V)200V– (IMPEDANCE)1501000–2–4–606410-004TxOUT LOW5002.72.93.1VCC (V)3.33.52.93.1VCC (V)3.33.506410-007–82.7Figure 4. Transmitter Output Voltage vs. VCC

8641422018TxOUT HIGH16Figure 7. Charge Pump Impedance vs. VCC

ICC @ 460kbpsTxOUT (V)ICC (mA)121086ICC @ 230kbps0–2–4TxOUT LOW–606410-0054202468LOAD CURRENT (mA)1012010002000LOAD CAPACITANCE (pF)3000Figure 5. Transmitter Output Voltage High/Low vs. Load Current Figure 8. Power Supply Current vs. Load Capacitance

Rev. B | Page 6 of 12

06410-008–8006410-006–8

ADM3232E

1TT2CH 15.00VCH 25.00VM1.00μsCH10VFigure 9. 460 kbps Data Transmission

06410-009Rev. B | Page 7 of 12

MEMORY存储芯片ADM3232EARUZ-REEL7中文规格书 - 图文

FEATURESDatarate:460kbps2Txand2RxMeetsEIA-232Especifications0.1μFchargepumpcapacitorsESDprotectiontoIEC1000-4-2(801.2)onRS-232I/OsContactdischarge:
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