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半导体传感器PTVS16VS1UTR中文规格书

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NXP Semiconductors

PTVSxS1UTR series

High-temperature 400 W Transient Voltage Suppressor

I?VCL?VBR?VRWM?IRM?IR?P-N+V?IPP?IPPM006aab324Fig 4.V-Icharacteristics for a unidirectional TVSprotection diode8.Test information

8.1Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

9.Package outline

1.91.511.10.90.60.33.73.32.82.421.050.75Dimensions in mm0.220.1008-11-06Fig 5.Package outline SOD123WPTVSXS1UTR_SERAll information provided in this document is subject to legal disclaimers.? NXP B.V. 2011. All rights reserved.

Product data sheetRev. 1 — 11 October 2011 7 of 12

NXP Semiconductors

PTVSxS1UTR series

High-temperature 400 W Transient Voltage Suppressor

10.Packing information

Table 11.Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number[2]PTVSxS1UTRseries

[1][2]

PackageSOD123W

Description

4mm pitch, 8mm tape and reel

Packing quantity3000-115

For further information and the availability of packing methods, see Section14.The series consists of 35types with reverse standoff voltages from 3.3V to64V.

11.Soldering

4.42.92.8solder landssolder resist2.11.61.11.2(2×)(2×)solder pasteoccupied area1.1(2×)1.2(2×)Dimensions in mmsod123w_frReflow soldering is the only recommended soldering method.Fig 6.Reflow soldering footprint SOD123WPTVSXS1UTR_SERAll information provided in this document is subject to legal disclaimers.? NXP B.V. 2011. All rights reserved.

Product data sheetRev. 1 — 11 October 2011 8 of 12

半导体传感器PTVS16VS1UTR中文规格书

NXPSemiconductorsPTVSxS1UTRseriesHigh-temperature400WTransientVoltageSuppressorI?VCL?VBR?VRWM?IRM?IR?P-N+V?IPP?IPPM006aab324Fig4.V-Icharacteristicsforaunidirectional
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