SS8050 — NPN Epitaxial Silicon TransistorSS8050
NPN Epitaxial Silicon Transistor
Features
?2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.?Complimentary to SS8550?Collector Current: IC = 1.5 A
1
TO-92
1.Emitter 2. Base 3. Collector
Ordering Information
Part Number
SS8050BBUSS8050CBUSS8050CTASS8050DBUSS8050DTA
Top Mark
S8050S8050S8050S8050S8050
Package
TO-92 3LTO-92 3LTO-92 3LTO-92 3LTO-92 3L
Packing Method
BulkBulkAmmoBulkAmmo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBOVCEOVEBOICTJTSTG
Collector-Base VoltageCollector-Emitter Voltage Emitter-Base VoltageCollector CurrentJunction TemperatureStorage Temperature
ParameterValue
402561.5150-65 to 150
Unit
VVVA°C°C
? 2004 Fairchild Semiconductor CorporationSS8050 Rev. 1.1.0
SS8050 — NPN Epitaxial Silicon TransistorThermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PDRθJA
Power DissipationDerate Above 25°C
ParameterValue
18125
Unit
WmW/°C°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1.PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBOBVCEOBVEBOICBOIEBOhFE1hFE2hFE3VCE(sat)VBE(sat)VBE(on)CobfT
Parameter
Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-Off CurrentEmitter Cut-Off CurrentDC Current Gain
Collector-Emitter Saturation VoltageBase-Emitter Saturation VoltageBase-Emitter On VoltageOutput Capacitance
Current Gain Bandwidth Product
Conditions
IC = 100 μA, IE = 0IC = 2 mA, IB = 0IE = 100 μA, IC = 0VCB = 35 V, IE = 0VEB = 6 V, IC = 0VCE = 1 V, IC = 5 mAVCE = 1 V, IC = 100 mA VCE = 1 V, IC = 800 mA IC = 800 mA, IB = 80 mAIC = 800 mA, IB = 80 mAVCE = 1 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 50 mA
Min.
40256
Typ.Max.Unit
VVV
100100
458540
0.51.21
9.0
100
300
nAnA
VVVpFMHz
hFE Classification
Classification
hFE2
B
85 ~ 160
C
120 ~ 200
D
160 ~ 300
? 2004 Fairchild Semiconductor CorporationSS8050 Rev. 1.1.0
SS8050 — NPN Epitaxial Silicon TransistorTypical Performance Characteristics0.51000VCE = 1VIC[A], COLLECTOR CURRENTIB = 3.0mA0.4IB = 2.5mA0.3hFE, DC CURRENT GAIN100IB = 2.0mAIB = 1.5mAIB = 1.0mA0.2100.1IB = 0.5mA00.40.81.21.62.010.11101001000VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicVBE(sat), VCE(sat)[mV], SATURATION VOLTAGEFigure 2. DC Current Gain10000100IC = 10 IBVCE = 1VVBE(sat)1000IC[mA], COLLECTOR CURRENT101001000101001VCE(sat)100.110.10.00.20.40.60.81.01.2IC[mA], COLLECTOR CURRENTVBE[V], BASE-EMITTER VOLTAGEFigure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation VoltageFigure 4. Base-Emitter On Voltage10001000100fT[MHz], CURRENT GAIN BANDWIDTH PRODUCTIE = 0f = 1MHz VCE = 10VCob [pF], CAPACITANCE100101011101001110100400VCB [V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Collector Output CapacitanceFigure 6. Current Gain Bandwidth Product? 2004 Fairchild Semiconductor CorporationSS8050 Rev. 1.1.0
5.20 4.32
5.33 4.32
cgj?）
15.62 13.20
21 3
0.56 0.36
0.52 0.30
12M]
NOTES: UNLESS OTHERWISE SPECIFIED
A) B) C) D)
D阳，WINGWITH RE陀RENCETO JEDEC T0-92 RECOMMENDATIONS.
ALL DIMENSIONS ARE IN MILLIM盯ERS.D阳WINGCONFORMS TO ASME Y14.SM-2009. D阳.WINGFILENAME: M盯－ZA03DR凹4.
4.19 3.05
2.66 2.13
MEMORY存储芯片SS8050中文规格书 - 图文
