MANUFACTURE OF SEMICONDUCTOR DEVICE, AND
PHOTOMASK AND ITS MANUFACTURE
申请(专利)号： JP19970219579
专利号： JPH1165083A 主分类号： G03F1/08 申请权利人： HITACHI LTD
公开国代码： JP 优先权国家： JP
摘 要：
PROBLEM TO BE SOLVED: To prevent side effect occurring in a phase shift mask so as to enhance resolution. ;SOLUTION: A mask hole pattern 36 provided on a photomask 35 corresponds to a hole pattern to be transferred to a
semiconductor wafer, and has the maximum transmittance. Around the mask pattern 36 an intermediate
transmittance pattern 37 is formed so as to have 180±60 degrees of phase difference against the mask hole pattern 36 by phase shift. Around the intermediate transmittance pattern 37 the minimum transmittance pattern 38 is formed. Using this photomask 35, the high resolution hole pattern is transferred onto the semiconductor
申请日： 1997-08-14 公开公告日： 1999-03-05
分类号： G03F1/08;
H01L21/027 发明设计人： MAEJIMA HIROSHI;
KUNIYOSHI SHINJI; IRIKITA NOBUYUKI; KOMORIYA SUSUMU; KOBAYASHI MASAMICHI;
HANAJIMA SHUICHI 申请国代码： JP
优先权： 19970814 JP
21957997
摘 要 附 图：
wafer.;COPYRIGHT: (C)1999,JPO 主权项：
【請求項1】 透過する光に少なくとも2種類の位相差を与えるとともに少なくとも3種類の透過率によって透過させかつ半導体ウェハに転写されるマスクパターンを有したフォトマスクを準備する工程と、 前記半導体
权 利 要 求 说 明 书
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MANUFACTURE OF SEMICONDUCTOR DEVICE, AND PHOTOMASK AND ITS MANUFACTURE
