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半导体传感器ADG1412YRUZ中文规格书 - 图文

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Data Sheet TERMINOLOGY

VDD

Most positive power supply potential. VSS

Most negative power supply potential. IDD

Positive supply current. ISS

Negative supply current. GND

Ground (0 V) reference.

S

Source terminal. Can be an input or output. D

Drain terminal. Can be an input or output. AX

Logic control input.

EN

Active low digital input. When EN is high, the device is disabled and all switches are off. When EN is low, the Ax logic inputs determine the on switches.

VD, VS

Analog voltage on Terminal D and Terminal S. RON

Ohmic resistance between Terminal D and Terminal S. ΔRON

On-resistance match between any two channels, that is, RONMAX ? RONMIN.

RFLAT(ON)

Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range.

IS(OFF)

Source leakage current with the switch off. ID(OFF)

Drain leakage current with the switch off. ID(ON), IS(ON)

Channel leakage current with the switch on. VINL

Maximum input voltage for Logic 0.

VINH

Minimum input voltage for Logic 1. IINL, IINH

Input current of the digital input.

ADG633

CS(OFF)

Off switch source capacitance. Measured with reference to ground.

CD(OFF)

Off switch drain capacitance. Measured with reference to ground.

CD(ON), CS(ON)

On switch capacitance. Measured with reference to ground. CIN

Digital input capacitance.

tON (EN)

Delay between applying the digital control input and the output switching on (see Figure 26).

tOFF (EN)

Delay between applying the digital control input and the output switching off (see Figure 26).

tBBM

On time, measured between 80% points of both switches when switching from one address state to another.

Charge Injection

A measure of the glitch impulse transferred from the digital input to the analog output during switching.

Off Isolation

A measure of unwanted signal coupling through an off switch. Crosstalk

A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Bandwidth

The frequency at which the output is attenuated by 3 dB. On Response

The frequency response of the on switch. Insertion Loss

The loss due to the on resistance of the switch.

Rev. B | Page 11 of 16

ADG633 TEST CIRCUITS

IDSV1Data Sheet

SDNC03275-020SDID(ON)A03275-022VSRON = V1/IDSNC = NO CONNECTVDFigure 20. On Resistance Figure 22. Drain Off Leakage

VDDVDDIS(OFF)AVSID(OFF)A03275-021VSSVSSID(ON)AVD03275-023S1AS1BVSENGNDSDDVDFigure 21. Source Off Leakage Figure 23. Channel On Leakage

VDD0.1μFVDDA2VIN50?A1A0VSS0.1μFVSSS1AS1BVS1AVS1B3VADDRESSDRIVE (VIN)0V90%VOUT90%DGNDRL300?CL35pFVOUT03275-02403275-02550P-G633ENtTRANSITIONtTRANSITIONFigure 24. Transition Time, tTRANSITION

VDD0.1μFVDDA2VIN50?A1A0VSS0.1μF3VVSSS1AS1BVSADDRESSDRIVE (VIN)0VADG633ENGNDD1RL300?CL35pFVOUTVOUT80?%tBBMFigure 25. Break-Before-Make Delay, tBBM

Rev. B | Page 12 of 16

半导体传感器ADG1412YRUZ中文规格书 - 图文

DataSheetTERMINOLOGYVDDMostpositivepowersupplypotential.VSSMostnegativepowersupplypotential.IDDPositivesupplycurrent.ISSNegativesupplycu
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