FDS4435June 1999FDS4435P-Channel Logic Level PowerTrenchTM MOSFETGeneral DescriptionThis P-Channel Logic Level MOSFET is produced usingFairchild Semiconductor's advanced PowerTrench processthat has been especially tailored to minimize on-stateresistance and yet maintain superior switchingperformance.This device is well suited for low voltage and batterypowered applications where low in-line power loss andfast switching are required.Features?? -8.8 A, -30 V. RDS(ON) = 0.020 ? @ VGS = -10 V???? RDS(ON) = 0.035 ? @ VGS = -4.5 VLow gate charge (17nC typical).Fast switching speed.?? High performance trench technology for extremely low RDS(ON).Applications??????DC/DC converterLoad switchMotor drives??High power and current handling capability.''''????????????62????666*????$EVROXWH??0D[LPXP??5DWLQJV????U?2?!$??8?????yr?????????ur????v??r???????rq$6\\PEROW'66W*66D'Q'9??hv????T??????pr?W??y??htrBh??r??T??????pr?W??y??htr9??hv???8??????r????3DUDPHWHU5DWLQJV??\??I????r? h??8QLWVWW6X???8??????v??????????????Q??y??rq±!????'??'??$??!??$ ??! ??$$???????? $??Q????r???9v????v??h??v?????s?????Tv??tyr?P??r??h??v??????I????r? h????I????r? i????I????r? p??U-???UVWJP??r??h??v??t?h??q?T??????htr?E????p??v?????Ur????r??h??????r?Sh??tr°87KHUPDO??&KDUDFWHULVWLFVSθ-$Sθ-&Uur????hy?Sr??v????h??pr???E????p??v????????????6??ivr????Uur????hy?Sr??v????h??pr???E????p??v????????????8h??r??I????r? h????I????r? ??$??!$°8??X°8??X3DFNDJH??0DUNLQJ??DQG??2UGHULQJ??,QIRUPDWLRQ'HYLFH??0DUNLQJ??????A9T##\?1999 Fairchild Semiconductor Corporation
'HYLFHA9T##\5HHO??6L]H \7DSH??:LGWK !????4XDQWLW\\!$?????????v????FDS4435 Rev. D
FDS4435(OHFWULFDO??&KDUDFWHULVWLFV????????????U?2?!$??8?????yr?????????ur????v??r???????rq$6\\PERO7W'663DUDPHWHU9??hv????T??????pr?7??rhxq???????W??y??htr7??rhxq???????W??y??htr?Ur????r??h??????r8??rssvpvr????ar?????Bh??r?W??y??htr?9??hv???8??????r????Bh??r??7??q???Grhxhtr?8??????r??????A??????h??qBh??r??7??q???Grhxhtr?8??????r??????Sr??r????rBh??r?Uu??r??u??yq?W??y??htrBh??r?Uu??r??u??yq?W??y??htrUr????r??h??????r?8??rssvpvr????T??h??vp?9??hv????T??????prP????Sr??v????h??prP????T??h??r?9??hv???8??????r????A??????h??q?U??h????p????q??p??h??prD?????????8h??hpv??h??pr7HVW??&RQGLWLRQVW*6?2????W???D'?2???!$???μ6D'?2???!$???μ6??Srsr??r??prq??????!$°8W'6?2???!#?W???W*6?2????WW*6?2?!???W???W'6?2????WW*6?2???!????W???W'6?2????W0LQ??\7\\S0D[8QLWVW2II??&KDUDFWHULVWLFV 7W'66? ?U-D'66D*66)D*665??!!?? ?????? ??????W??°8μ6??6??62Q??&KDUDFWHULVWLFV????????I????r?!??W*6??WK??W'6?2?W*6???D'?2???!$???μ6D'?2???!$???μ6??Srsr??r??prq??????!$°8W*6?2??? ???W???D'?2???'??'?6W*6?2??? ???W???D'?2??'??'?6??U-2 !$°8W*6?2???#??$?W???D'?2???%??&?6W*6?2??? ???W???W'6?2???$?WW'6?2??? ???W???D'?2???$?6W'6?2??? $?W???W*6?2????W??s?2? ?????HC???? ?? ??$#?????? &??????!\??????!#??\W??W??°8 W*6??WK??? U ?-S'6??RQ??D'??RQ??t)68LVV??????!????????\??????\?6??#??! %????#%$!????T??A??A??A '!$ !??%??!$??????????????????8??8??8??!?? 6W'\\QDPLF??&KDUDFWHULVWLFV8RVV8UVV??G??RQ????U??G??RII????IRJRJVRJGD6P???????????8h??hpv??h??prSr??r????r?U??h????sr???8h??hpv??h??prU????????P???9ryh???Uv??rU????????P???Sv??r?Uv??rU????????Pss?9ryh???Uv??rU????????Pss?Ahyy?Uv??rU????hy?Bh??r?8uh??trBh??r??T??????pr?8uh??trBh??r??9??hv???8uh??tr6ZLWFKLQJ??&KDUDFWHULVWLFV????????I????r?!??W''?2??? $?W???D'?2??? ?6??W*6?2??? ????W???S*(1?2?%?? ?? \'\\W'6?2??? $?W???D'?2???'??$?6??W*6?2???$?W &$&'UDLQ??6RXUFH??'LRGH??&KDUDFWHULVWLFV??DQG??0D[LPXP??5DWLQJVHh??v???????8??????v???????????9??hv????T??????pr?9v??qr?A??????h??q?8??????r????9??hv????T??????pr?9v??qr?A??????h??qW??y??htrW6'W*6?2????W???D6?2???!?? ?6???????????I????r?!????????&\?? ??!Notes:1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.a) 50° C/W whenmounted on a 1 in2pad of 2 oz. copper.b) 105° C/W whenmounted on a 0.04 in2pad of 2 oz. copper.c) 125° C/W on a minimummounting pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0yS4435 Rev. D
FDS4435Typical Characteristics$??W*6?2??? ??W??%????W!??#??$????W??#??$W??#????W9@aDG6HSPI?????S12??6'??#??6???UI@S\SV8?ID6!??S9???D'?? ????\??\@!??!8I6U!TDT@ ??'S??IP? ??%@8S ??#VPT?? ??!ID6S 9????'??W*6?2???\???#????W???#??$W???$????W???%????W???&????W???'????W??? ??W???? !\#$??W'6???9S6DI??TPVS8@?WPGU6B@???W?? ??!??\#??$????D'???9S6DI?8VSS@IU???6??Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variationwith Drain Current and Gate Voltage.??????&D'?2???#??#6 ??%@8I6 ??#UTDT@S?? ??!IP?@8S VPT??ID????'6S9?????%??$????!$??!$$??&$ ????RD'?2???'??'6W*6?2??? ??W9@aDG6HSPI?????S12??6'??H??????%CP?????????$@8I6??????#UTDT@??????\S??IP???????????!S?????? ??12??6'U$?2? !$8U$?2?!$R8R !$ $??!#%' ??U-???EVI8UDPI?U@HQ@S6UVS@???8????W*6???B6U@?UP?TPVS8@?WPGU6B@???W??Figure 3. On-Resistance Variation with Temperature$??W'6?2???$W??#??6???UI@S\SV8?ID!??6S9???'D?? ??U$?2???$$8RFigure 4. On-Resistance Variationwith Gate-to-Source Voltage ????!$8 !$8RR??6??? ??UI@SS V8?ID6???? S9?@T?????? S@W@S???6???????? D??$W*6?2???WU$?2? !$R8!$R8??$$R8?? !\#??W*6???B6U@?UP?TPVS8@?WPGU6B@???W???????????? ??????!????#????%????' ??! ??#??WT9????7P9`?9DP9@?APSX6S9?WPGU6B@???W??Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward VoltageVariationwith Source Currentand Temperature.FDS4435 Rev. D
FDS4435
