JC(TSOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN)
UMX1N
FEATURES
Two 2SC2412K chips in a SOT-563 packagez
Mounting possible with SOT-563 automatic mounting machinesz
Transistor elements are independent, eliminating interferencezzMounting cost and area can be cut in halfMARKING:X1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg ParameterCollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 7 150 150 150 -55-150Units V V V mA mW ℃ ℃ SOT-363 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwisespecified)
Parameter
Collector-base breakdown voltage
Symbol
Test conditions
Min60507
Typ M ax Unit=V(BR)CBOIC=50μA,IE0
V
V(BR)CEOIC=1mA,IB0Collector-emitter breakdown voltage =Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Transition frequency Collector output capacitance
=V(BR)EBOIE=50μA,IC0=VCB=60V,IE0ICBO =VEB=7V,IC0IEBO
hFE
VCE=6V,I=C1mA
V
V 0.1μA 0.1μA
120560
=VCE(sat) IC=50mA,IB5mA
fT
=VCE=12V,I=C2mA,f100MHz
0.4 V180
MHz
= =VCB=12V,IE0,f1MHzCob
2.0 3.5 pF
C,Oct,2014
SymbolAA1A2bcDEE1ee1LL1θDimensions In MillimetersMinMax0.9001.1000.0000.1000.9001.0000.1500.3500.0800.1502.0002.2001.1501.3502.1502.4500.650 TYP1.2001.4000.525 REF0.2600.4600°8°Dimensions In InchesMinMax0.0350.0430.0000.0040.0350.0390.0060.0140.0030.0060.0790.0870.0450.0530.0850.0960.026 TYP0.0470.0550.021 REF0.0100.0180°8°A,Jun,2014C,Oct,2014
A,Jun,2014C,Oct,2014
MEMORY存储芯片UMX1N中文规格书 - 图文
