SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
申请(专利)号： JP19970139993
专利号： JPH10335490A 主分类号： H01L21/8244
申请权利人： NEC CORP 公开国代码： JP 优先权国家： JP
摘 要：
PROBLEM TO BE SOLVED: To wire
power lines for supplying electric power to a static memory at low resistance values, by forming word lines arranged on a static memory cell and the power lines in the same pattern through the etching process of the same mask. ;SOLUTION: A
titanium silicide film, a silicon oxide film, and a tungsten polycide film are worked in the same pattern by using the photolithography technology and dry etching technology. Consequently, word lines 7-7b, inter- wiring insulating films 8-8b, and power lines 9-9b are formed in the same shape. Therefore, the
resistance values of the work lines and power lines of a static memory cell can be reduced easily. In addition, the wiring density of the power lines and word lines of the memory cell can be increased and the wires can be reduced in thickness. Moreover, the manufacturing process of such a static memory cell can be
申请日： 1997-05-29 公开公告日： 1998-12-18
分类号： H01L21/8244;
H01L27/11; H01L21/3205; H01L27/04; H01L21/822 发明设计人： HORIBA SHINICHI 申请国代码： JP
优先权： 19970529 JP
13999397
摘 要 附 图：
simplified.;COPYRIGHT: (C)1998,JPO 主权项：
【請求項1】 半導体基板の表面に形成された1対の転送用MOSトランジスタと、フリップフロップ回路を構成する1対の駆動用MOSトランジスタおよび1対の負荷素子とで形成されるスタティック型メモリセルにお
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SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
