TP808规格书(亿光PT928-6C_IR928-6C对管)

TP808

■FEATURE:

FastResponseTime.HighAnalytic.

Cut-OffVisibleWavelength?p=940nmHighsensitivity.

LeadFreeproduct,incompliancewithRoHS.

■DESCRIPTIONS:

TP808consistofaninfraredemittingdiodeandaphototransistor,encasedside-by-sideonconvergingopticalaxisinablackthermoplastichousingthephototransistorreceivesradiationfromtheIRLEDonly.Thisisthenormalsituation.Butwhenanobjectisinbetween,thephototransistorcouldnotreceivetheradiation.

■APPLICATIONS:

Mousecopier.Switchscanner.Floppydiskdriver.Noncontactswitching.

1TP808

■DIMENSIONS

NOTE：1.Alldimensionsareinmillimeter.2.Toleranceis±0.2unlessotherwisenoted.2TP808

■ABSOLUTEMAXIMUMRATINGSATTa=25℃

ParameterPowerDissipationInputReverseVoltageForwardCurrentPeakForwardCurrentCollectorPowerDissipationOutputCollectorCurrentCollector-EmitterBreakdownVoltageEmitter-CollectorBreakdownVoltageOperatingTemperatureStorageTemperatureSolderingTemperatureSymbolPDVRIFIFPPCICBVCEOBVECOToprTstgTsolRatings7555017520305-25～+85-40～+85270℃for6secMax(2mmfromBody)UnitmWVmAAmWmAVV℃℃NOTES:IFPCONDITIONS--PULSEWIDTH≦100SANDDUTY≦1%.

■TYPICALELECTRICAL&OPTICALCHARACTERISTICS（Ta=25℃）

ParameterForwardVoltageInputReverseCurrentPeakWavelengthViewAngleCollectorDarkCurrentCollector-EmitterSaturationVoltageOnStateCollectorCurrentRiseTimeFallTimeSymbolVFIR?P2?1/2ICEOVCE(sat)940601000.4Min.TypeMax.Unit1.251.510V?AnmDegnAVVCE=10VIc=2mAIB=100μAVCE=5VIF=20mAVCE=5VIc=1mARL=1000Ω3TestConditionIF=50mAVF=5VOutputIC(on)TrTf0.5--10mATrnsferCharacteristics1515μSμSTP808

■RELIABILITYTESTITEMSANDCONDITIONS：

NO12ItemSolderHeatTemperatureCycleTestConditionsTEMP：270℃±3℃H:+85℃180min10minL:-25℃180min3ThermalShockH:+85℃30min30secL:-25℃30min4HighTemperatureStorage56LowTemperatureStorageHighTemperatureHighHumidityStorage85℃/93%RH1000HRS22pcs0DEFECTTestHours/Cycle10SEC16cyclesSampleQuantity11pcs22pcsTestResult0DEFECT0DEFECT10cycles11pcs0DEFECTTEMP：+25℃1000HRS22pcs0DEFECTTEMP：-25℃1000HRS22pcs0DEFECT4TP808

■TYPICALELECTRO-OPTICALCHARACTERISTICSCURVESFORIR:

1.0IF=0mA0.5RelativeRadiantIntensity(IF=20mA)RelativeRadiantIntensity00-40-20020406080100AmbientTemperatureTa(°C)Fig.2RelativeRadiantIntensityVsAmbientTemperature840940Wavelength(nm)Fig.1SpectralDistribution104010080Forwardcurrent(mA)604020000.61.21.82.4ForwardVoltage(V)3.0RadiantIntensity(mW/Sr)500300100503010533103050100300ForwardCurrent(mA)Fig.4ForwardCurrentVsRadiantIntensity5500Fig.3ForwardCurrentVsForwardVoltage010°20°30°40°1.00.90.80.70.50.30.10.20.40.6RadiantIntensityFig.5AngleVsRadiantIntensity550°60°70°80°90°