DW01M
7. Functional Block Diagram
FOFoPRr RroTUpefeNEerrti' eensce Only 8. Typical Application Circuit
Symbol Purpose RecommendedR1 ESD protection. 100~470Ω For power fluctuation.C1 R2 For power fluctuation.Protection for reverse connection of a charger. Remakes Resistance should be as small as possible to avoid lowering of the overcharge detection accuracy caused by VDD pin current. Use 470Ω for better ESD protection. 0.1μF 1k~2kΩ Select a resistance as large as possible to prevent large current when a charge is connected in reverse.
Rev. 1.9
6/17
DW01M
9. Absolute Maximum Ratings
(GND=0V, Ta=25°C unless otherwise specified)
Item SymbolInput voltage between VCC and GND *Note1 CS input pin voltage
Operating Temperature Range Storage Temperature Range Drain-Source Voltage Gate-Source Voltage
VCC VCS TOP TST
Rating Unit GND-0.3 to GND+10 VCC -20 to VCC +0.3
-40 to +85 -40 to +125
20
V V °C °C V
FOFoPRr RroTUpefeNEerrti' eensce OnlyVDS VGS
±12
V
Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
ID @TA=25℃
ID @TA=70℃
IDM PD @TA=25℃
PD @TA=25℃
25
A
Total Power Dissipation (TSSOP-8) Total Power Dissipation (SOT-23-6) Linear Derating Factor
0.008
W/℃
Note1: DW01M contains a circuit that will protect it from static discharge; but please take special care that no
excessive static electricity or voltage which exceeds the limit of the protection circuit will be applied to it.
Rev. 1.9
6 A 5 A 1 W 0.5 W 7/17
DW01M
10. Electrical Characteristics
(Ta=25°C unless otherwise specified)
PARAMETER TEST CONDITIONSSYMBOLSupply Current Overdischarge Current Overcharge Protection Voltage Overcharge Release Voltage
VCC=3.9V VCC=2.0V DW01MC-S、
DW01MC-T DW01MC-S、DW01MC-T DW01MC-SA、DW01MC-TA DW01MC-SA、DW01MC-TA
ICC IOD
Min Typ Max UNIT
3.0 1.5
6.0 3
μAμA
FOFoPRr RroTUpefeNEerrti' eensce OnlyVOCP 4.25 4.30 4.35 V VOCR 4.05 4.10 4.15 V Overcharge Protection Voltage Overcharge Release Voltage
VOCP 4.21 4.28 4.35 V VOCR 4.01 4.08 4.15 V Overdischarge Protection Voltage Overdischarge Release Voltage Overcurrent Protection Voltage
VOIP（VOI1）
120 150 180 mV
Short Current Protection Voltage Overcharge Delay Time
VCC=3.6V
VSIP
（VOI2）TOC
1.00 1.35 1.70 V
80
200
ms
Overdischarge Delay Time
VCC=3.6V to 2.0V
TOD
40
100 20
ms
Overcurrent Delay Time (1) Overcurrent Delay Time (2)
VCC=3.6V
TOI1
10
msμs
VCC=3.6V
TOI2
100
200
Charger Detection Threshold
Voltage
Minimum operating Voltage for 0V charging. *Note1
Voltage defined as VDD-CSI, VDD-VSS=0V
VST 1.5 V N-MOSFET
Drain-Source Breakdown Voltage
(BATT- to D12 / D12 to GND) Breakdown Voltage Temperature Coefficient
VGS=0V,ID=250uA BVDSSReference to 25℃, ID=1mA
20
V ΔBVDSS/ΔTj
V/℃ 0.1 VGS=3.7V,ID=1A 50 55 mΩStatic Source-Source
On-Resistance (BATT- to GND) 60 70 mΩ==VGS2.7V,ID1A RSS(ON)
Static Source-Source ==VGS3.7V,ID1A 55 60 mΩOn-Resistance (BATT- to GND)
==VGS2.7V,ID1A 65 75 mΩOnly DW01MC-SA、TA Drain-Source Leakage Current)
(BATT- to D12 / D12 to GND) Drain-Source Leakage Current (BATT- to D12 / D12 to GND)
VDS=16V,VGS=0V VDS=16V,VGS=0V
IDSS (Tj=25℃)IDSS (Tj=70℃)
1 uA 25 uA
Rev. 1.9
VODP 2.30 2.40 2.50 V VODR 2.90 3.00 3.10 V VCH -1.2 -0.7 -0.2 V 8/17
DW01M
11. Description of Operation
Normal Condition
If VODP Overcurrent Protection In normal mode, the DW01M continuously monitors the discharge current by sensing the voltage of CS pin. If the voltage of CS pin exceeds the overcurrent protection voltage (VOIP) beyond the overcurrent delay time (TOI1) period, the overcurrent protection circuit operates and discharging is inhibited by turning off the discharge control MOSFET. The overcurrent condition returns to the normal mode when the load is released or the impedance between BATT+ and BATT- is larger than 500kΩ. The DW01M provides two overcurrent detection levels (0.15V and 1.35V) with two overcurrent delay time (TOI1 and TOI2) corresponding to each overcurrent detection level. Overcharge Protection When the voltage of the battery cell exceeds the overcharge protection voltage (VOCP) beyond the overcharge delay time (TOC) period, charging is inhibited by turning off of the charge control MOSFET. The overcharge condition is released in two cases: The voltage of the battery cell becomes lower than the overcharge release voltage (VOCR) through self-discharge. The voltage of the battery cell falls below the overcharge protection voltage (VOCP) and a load is connected. When the battery voltage is above VOCP, the overcharge condition will not release even a load is connected to the pack. FOFoPRr RroTUpefeNEerrti' eensce Only Charge Detection after Overdischarge Overdischarge Protection When the voltage of the battery cell goes below the overdischarge protection voltage (VODP) beyond the overdischarge delay time (TOD) period, discharging is inhibited by turning off the discharge control MOSFET. The default of overdischarge delay time is 40ms. Inhibition of discharging is immediately released when the voltage of the battery cell becomes higher than overdischarge release voltage (VODR) through charging. When overdischarge occurs, the discharge control MOSFET turns off and discharging is inhibited. However, charging is still permitted through the parasitic diode of MOSFET. Once the charger is connected to the battery pack, the DW01M immediately turns on all the timing generation and detection circuitry. Charging progress is sensed if the voltage between CS and GND is below charge detection threshold voltage (VCH). Auto Power Down recovery The IC continues to operate even after the overdischarge state has been entered. The battery voltage rising to the overdischarge release voltage(VODR) or higher is the only required condition for the IC to return to the normal state. Rev. 1.9 9/17 DW01M 12. Design Guide Suppressing the Ripple and Disturbance from Charger To suppress the ripple and disturbance from charger, connecting R1 and C1 to VCC is recommended. Protection the CS pin R2 is used for latch-up protection when charger is connected under overdischarge condition and overstress protection at reverse connecting of a charger. FOFoPRr RroTUpefeNEerrti' eensce Only Rev. 1.9 10/17
DW01M规格
