LESHAN RADIO COMPANY, LTD.
30V P-Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-5.3A = 70m?RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100m?
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM
LP9435LT1G
3
1
2
SOT– 23 (TO–236AB)
D▼ Simple Drive Requirement▼ Small Package Outline▼ Surface Mount Device
GSOrdering Information
Device LP9435LT1G
Marking
P94
Shipping 3000/Tape&Reel
LP9435LT3G 10000/Tape&ReelP94
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
Unit
VDSVGSIDIDMPDTJ, TstgRθJCRθJA
Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentPulsed Drain Current
1)
o
TA = 25C
-30± 20-5.3-202.51.2-55 to 150
2462.5
o
V
A
Maximum Power Dissipation
TA = 75C
o
W
o
Operating Junction and Storage Temperature RangeJunction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
C
C/W
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICSSymbolStatic
BVDSSRDS(on)RDS(on)VGS(th)IDSSIGSSgfs
Drain-Source Breakdown VoltageDrain-Source On-State ResistanceDrain-Source On-State ResistanceGate Threshold VoltageZero Gate Voltage Drain CurrentGate Body LeakageForward Transconductance
VGS = 0V, ID = -250uA
-30
LP9435LT1G
Test Condition
Min
Typ
Max
Unit
VmΩVuAnAS
Parameter
VGS = -4.5V, ID = -4.2A 100.070.0VGS = -10V, ID = -5.3A 70.050.0VDS =VGS, ID = -250uAVDS = -24V, VGS = 0VVGS = ± 20V, VDS = 0VVDS = -10V, ID = -5.3A
10
-1
-1.7
-31±100
Dynamic3)
QgQgsQgdtd(on)trtd(off)tfCissCossCrss
Total Gate ChargeGate-Source ChargeGate-Drain ChargeTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeInput CapacitanceOutput Capacitance
Reverse Transfer Capacitance
VDS = -15V, VGS = 0Vf = 1.0 MHz
VDD = -15V, RL = 15?ID = -1A, VGEN = -10V RG = 6??
VDS =-15V, ID = -5.3AVGS = -10V
28379157540745440120
pFnsnC
Source-Drain Diode
ISVSD
Max. Diode Forward CurrentDiode Forward Voltage
IS = -2.6A, VGS = 0V
-2.6-1.3
AV
NotePulse test: pulse width <= 300us, duty cycle<= 2%:
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LESHAN RADIO COMPANY, LTD.
LP9435LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
3/4
LESHAN RADIO COMPANY, LTD.
LP9435LT1G
SOT-23
NOTES:
AL31V
G2BS1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M,1982
2. CONTROLLING DIMENSION: INCH.DIMABCDGHJKLSV
INCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236
MILLIMETERS
MINMAX2.803.041.201.400.891.110.370.501.782.040.0130.1000.0850.1770.350.690.891.022.102.640.450.60
CDHKJ0.0370.950.0370.950.0792.00.0350.90.0310.8inchesmm4/4
LP9435
