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TI运算放大器LM2904PWR,LM2904PT - 图文

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LM2904PWR是一款双通道高增益频率补偿运算放大器，设计用于在很宽的电压范围内采用单电源或分离电源工作。运算放大器，双路，700 kHz，2个放大器，0.3 V / μs，±1.5V至±13V，TSSOP，8个指标

LM2904PWR/LM2904PT

1 特性

? ? ? ? ?

3V 至 36V 宽电源范围（B 版本）

静态电流：每个放大器 300μA（B 版本，典型值）单位增益带宽为 1.2MHz（B 版本）

共模输入电压范围包括接地，支持近地直接检测 3mV（25°C 时）的低输入失调电压（A 和 B 版本，最大值） ? 内部射频和 EMI 滤波器（B 版本）

? 对于符合 MIL-PRF-38535 标准的产品，所有参数

均经过测试，除非另外注明。对于所有其他产品，生产流程不一定包含对所有参数的测试。

3 说明

2 应用

? ? ? ? ? ? ? ? ? ? ?

商用网络和服务器电源单元多功能打印机

电源和移动充电器

电机控制：交流感应、刷式直流、无刷直流、高电压、低电压、永久磁性和步进电机台式计算机和主板室内外空调

洗衣机、烘干机和冰箱

交流逆变器、串式逆变器、中央逆变器和变频器不间断电源

可编程逻辑控制器电子销售点系统

单极低通滤波器

LM358B 和 LM2904B 是业界通用运算放大器 LM358

和 LM2904 的下一代版本，其中包括两个高压 (36V) 运算放大器。这些器件为成本敏感型应用带来了出色的价值，该器件的特性包括低失调电压（300μV，典型值）、接地共模输入范围以及高差分输入电压能力。

LM358B 和 LM2904B 运算放大器具有增强的功能，例如单位增益稳定性、较低的 3mV（室温下的最大值）失调电压和每个放大器 300μA（典型值）的静态电流，从而简化了电路设计。高 ESD（2kV，HBM）和集成 EMI 以及射频滤波器可支持将 LM358B 和 LM2904B 器件用于最严苛、最具环境挑战性的应用。

LM358B 和 LM2904B 放大器采用行业通用封装（包括SOIC、TSSOP 和 VSSOP）。

(1)

器件信息器件型号 LM358B、LM2904B、 LM358、LM358A、 LM2904、LM2904V、 LM258、LM258A LM358、LM358A、 LM2904、LM2490V 封装封装尺寸（标称值） SOIC (8) 4.90mm × 3.90mm LM358B(2)、LM2904B(2)、 TSSOP (8) 3.00mm × 4.40mm LM358B(2)、LM2904B(2)、 VSSOP (8) 3.00mm × 3.00mm LM358、LM358A、 LM2904、LM2904V、 LM258、LM258A LM358、LM2904 LM358、LM2904、 LM358A、LM258、 LM258A LM158、LM158A LM158、LM158A SO (8) 5.20mm × 5.30mm PDIP (8) CDIP (8) LCCC (20) 9.81mm × 6.35mm 9.60mm × 6.67mm 8.89mm × 8.89mm

VIN

V OUT

F(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

(2) 封装仅供预览。

?3 DB=

2πR1C1

OUT

(

VIN = 1 + RG

(((

1 + SR1C1

1 特性 .......................................................................... 1 2 应用 .......................................................................... 1 3 说明 .......................................................................... 1 4 修订历史记录 ........................................................... 2 5 Device Comparison Table..................................... 4 6 Pin Configuration and Functions ......................... 5 7 Specifications......................................................... 6

9.1 Overview ................................................................. 24 9.2 Functional Block Diagram - LM358B, LM358BA,

LM2904B, LM2904BA.............................................. 24 9.3 Feature Description................................................. 25 9.4 Device Functional Modes........................................ 25

10 Application and Implementation

7.1 Absolute Maximum Ratings ...................................... 6 7.2 ESD Ratings.............................................................. 6 7.3 Recommended Operating Conditions....................... 7 7.4 Thermal Information .................................................. 7 7.5 Electrical Characteristics: LM358B and LM358BA ... 8 7.6 Electrical Characteristics: LM2904B and LM2904B.. 9 7.7 Electrical Characteristics: LM358, LM358A ............ 10 7.8 Electrical Characteristics: LM2904, LM2904V ........ 11 7.9 Electrical Characteristics: LM158, LM158A ............ 12 7.10 Electrical Characteristics: LM258, LM258A 13 7.11 Typical Characteristics .......................................... 14 7.12 Typical Characteristics .......................................... 21

10.1 Application Information.......................................... 26 10.2 Typical Application ............................................... 26

11 Power Supply Recommendations 12 Layout

27 27

12.1 Layout Guidelines ................................................. 27 12.2 Layout Examples................................................... 28

13 器件和文档支持

8 Parameter Measurement Information 9 Detailed Description

23 24

13.1 13.2 13.3 13.4 13.5 13.6 13.7

文档支持................................................................ 29 相关链接................................................................ 29 接收文档更新通知 ................................................. 29 社区资源................................................................ 29 商标....................................................................... 29 静电放电警告......................................................... 29 术语表 ................................................................... 29

14 机械、封装和可订购信息

4 修订历史记录

注：之前版本的页码可能与当前版本有所不同。

Changes from Revision V (September 2018) to Revision W Page ? Added specification in the Device Comparison Table ............................................................................................................. 4 ?.................................................................................. 6 Changed CDM ESD rating for LM358B and LM2904B in ESD Ratings

?................................................................................................... 7 Changed VS to V+ in Recommended Operating Conditions

? Changed Thermal Information for the LM158FK and LM158JG devices ................................................................................ 7

? ? ? ?

已添加 Typical Characteristics section for the LM358B and LM2490B op amps ................................................................. 14 已添加 test circuit for THD+N and small-signal step response, G = –1 in the Parameter Measurement Information

section .................................................................................................................................................................................. 23 已更改 the Functional Block Diagram ...................................................................... 24 已删除在相关链接部分中删除了 LM358B 和 LM2904B 的预览标识符 ............................................................................. 29

Page

Changes from Revision U (January 2017) to Revision V

?1 更改了数据表标题 ................................................................................................................................................................... ?1 更改了特性部分的前四个项目 ............................................................................................................................................... ?1 更改了应用部分中的第一项并添加了四个新项 ........................................................................................................................ ?..................................................................................................................................... 1 在说明部分的第一段中更改了电压值

? 更改了说明部分第二段中的文本 ............................................................................................................................................ 1

? ? ? ?

已添加在数据表中添加了器件 LM358B 和 LM2904B ............................................................................................................ 1 更改了器件信息表的前三行，并为预览状态器件添加了交叉引用的注释 ............................................................................... 1 Added Device Comparison table ............................................................................................................................................ 4 Added a table note to the Pin Functions table ........................................................................................................................ 5

?6 Changed \Absolute Maximum Ratings condition statement ............... ?6 Changed all entries in the Absolute Maximum Ratings table except TJ and Tstg ...................................................................

? ? ? ? ? ? ? ? ?

? Deleted lead temperature and case temperature from Absolute Maximum Ratings ............................................................... 6

Changed device listings and their voltage values in the ESD Ratings table ........................................................................... 6 Changed \Recommended Operating Conditions condition

statement ............................................................................................................................................................................... 7 Changed table entries for all parameters in the Recommended Operating Conditions table .................................................. 7 Added rows to the Thermal Information table, and a table note regarding device-package combinations ............................. 7 Deleted the Operating Conditions table ................................................................................................................................ 13 Added a condition statement to the Typical Characteristics section ..................................................................................... 21 Changed specific voltages to a Recommended Operating Conditions reference ................................................................. 24 Changed unity-gain bandwidth from 0.7 MHz for all devices to 1.2 MHz for B-version devices ........................................... 25 Changed slew rate from.3 V/μs for all devices to o.5 V/μs for B-version devices ................................................................. 25

?25 Changed the Input Common Mode Range section in multiple places throughout ................................................................ ?26 Changed VCC to VS in the Application Information section .................................................................................................. ?26 Subscripted the suffixes fro RI and RF.................................................................................................................................. ? 已更改 Operational Amplifier Board Layout for Noninverting Configuration with an image that includes a dual op amp .... 28

?.................................................................................................. 29 在表 1

Changes from Revision T (April 2015) to Revision U

Page

?1 已更改数据表标题 ................................................................................................................................................................... ?29 已添加接收文档更新通知部分和社区资源部分 ..................................................................................................................

Changes from Revision S (January 2014) to Revision T Page ? 已添加应用部分、ESD 额定值表、特性说明部分、器件功能模式、应用和实现部分、电源推荐部分、布局部

1 分、器件和文档支持部分以及机械、封装和可订购信息部分 ................................................................................................

Changes from Revision R (July 2010) to Revision S Page ?1 使用 Web 上的 PDF 将此数据表从 QS 格式转换为 DocZone ........................................................................................... ? 删除了订单信息表 ................................................................................................................................................................. 1

? 更新了特性以包含“军用免责声明” ......................................................................................................................................... 1

? 已添加 Typical Characteristics section ................................................................................................................................. 21 ?29 添加了 ESD 警告 ................................................................................................................................................................. 5 Device Comparison Table

VOS (MAXIMUM AT 25°C) 3 mV 3 mV 7 mV 7 mV 3 mV 7 mV 5 mV 3 mV 5 mV 3 mV

IQ / CH (TYPICAL AT INTEGRATED EMI 25°C) FILTER 300 μA 300 μA 350 μA 350 μA 350 μA 350 μA 350 μA 350 μA 350 μA 350 μA

PART NUMBER LM358B LM2904B LM358 LM2904 LM358A LM2904V LM158 LM158A LM258 LM258A SUPPLY VOLTAGE 3 V–36 V 3 V–36 V 3 V–32 V 3 V–26 V 3 V–32 V 3 V–32 V 3 V–32 V 3 V–32 V 3 V–32 V 3 V–32 V TEMPERATURE RANGE –40°C to 85°C –40°C to 125°C 0°C to 70°C –40°C to 125°C 0°C to 70°C –40°C to 125°C –55°C to 125°C –55°C to 125°C –25°C to 85°C –25°C to 85°C PACKAGE D, DGK, PW D, DGK, PW D, PW, DGK, P, PS D, PW, DGK, P, PS D, PW, DGK, P D, PW JG, FK JG, FK D, DGK, P D, DGK, P Yes Yes No No No No No No No No

6 Pin Configuration and Functions

NC D, DGK, P, PS, PW, and JG Packages

8-Pin SOIC, VSSOP, PDIP, SO, TSSOP, and CDIP

Top View

FK Package

20-Pin LCCC Top View

NC OUT1 IN1± IN1+

1 2

8 7 6

V+

V+ NC

OUT1

OUT2 IN2± IN2+

V±

NC IN1± NC IN1+ NC

4 5 6 7 8

18 17 16 15 14

NC OUT2 NC IN2± NC

NOT TO SCALE

NAME IN1– IN1+ IN2– IN2+ OUT1 OUT2 V– (1)

11 12 13 IN2+ NC NC

V±

NOT TO SCALE

NC - No internal connection

LCCC 5 7 15 12 2 17 10 Pin Functions PIN I/O SOIC, SSOP, CDIP, PDIP, SO, TSSOP, CFP(1) 2 I 3 I 6 I 5 I 1 O 7 O DESCRIPTION Negative input Positive input Negative input Positive input Output Output 4 — — — Negative (lowest) supply or ground (for single- supply operation) No internal connection NC 1, 3, 4, 6, 8, 9, 11, 13, 14, 16, 18, 19 V+ 20 8 — Positive (highest) supply (1) For a listing of which devices are available in what packages, see Device Comparison Table.

7 Specifications

7.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)(1) LM358B, LM358BA, LM2904B, LM2904BA LM158, LM258, LM358, LM158A, LM258A, LM358A, LM2904V MIN MAX UNIT ±20 or 40 Supply voltage, VS = ([V+] – [V–]) ±16 or 32 V –32 ±13 or 26 (2)Differential input voltage, VID LM2904 LM358B, LM358BA, LM2904B, LM2904BA,LM158, LM258, LM358, LM158A, LM258A, LM358A, LM2904V LM2904 LM358B, LM358BA, LM2904B, LM2904BA LM158, LM258, LM358, LM158A, LM258A, LM358A, LM2904V LM2904 32 V –26 –0.3 26 40 V Input voltage, VI Either input –0.3 –0.3 32 26 Unlimited Duration of output short circuit (one amplifier) to ground at (or below) TA = 25°C, V ≤ 15 V(3) S s LM158, LM158A LM258, LM258A LM358B, LM358BA LM358, LM358A LM2904B, LM2904BA, LM2904, LM2904V –55 –25 –40 0 –40 125 85 85 70 125 Operating ambient temperature, TA °C °C °C Operating virtual-junction temperature, TJ Storage temperature, Tstg –65 150 150 （1）超出绝对最大额定值列出的应力可能会导致设备永久损坏。这些仅是额定压力，并不意味着在这些或任何其他条件（超出“建议的工作条件”中指示的条件）下设备的功能运行。长时间处于绝对最大额定条件下可能会影响设备的可靠性。（2）相对于IN?，差分电压为IN +。

（3）从输出到VS的短路会导致过热并最终损坏。

7.2 ESD Ratings Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) LM358B, LM358BA, LM2904B, AND LM2904BA VALUE UNIT V(ESD) Electrostatic discharge (2) ±2000 ±1000 Charged-device model (CDM), per JEDEC specification JESD22-C101 Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) V LM158, LM258, LM358, LM158, LM258A, LM358A, LM2904, AND LM2904V V (ESD) Electrostatic discharge (2) ±500 ±1000 Charged-device model (CDM), per JEDEC specification JESD22-C101 V (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6 Copyright ? 1976–2019,

7.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted) LM358B, LM358BA, LM2904B, LM2904BA Supply voltage, VS= ([V+] – [V–]) LM158, LM258, LM358, LM158A, LM258A, LM358A, LM2904V LM2904 Common-mode voltage MIN 3 MAX 36 UNIT V VS 3 30 V CM3 V– –40 –40 26 V+ – 2 85 125 70 85 125 V LM358B, LM358BA LM2904B, LM2904BA, LM2904, LM2904V °C TA Operating ambient temperature LM358, LM358A LM258, LM258A LM158, LM158A 0 –20 –55 7.4 Thermal Information THERMAL METRIC(1) LM258, LM258A, LM358, LM358A, LM358B, LM358BA, LM2904, LM2904BA, LM2904V(2) LM2904B, D (SOIC) DGK (VSSOP) 8 PINS LM158, LM158A FK JG (LCCC) (CDIP) 20 PINS P (PDIP) PS (SO) PW (TSSOP) 8 PINS UNIT R θJA Junction-to-ambient thermal resistance Junction-to-case (top) thermal resistance Junction-to-board thermal resistance Junction-to-top characterization parameter Junction-to-board characterization parameter Junction-to-case (bottom) thermal resistance 8 PINS 8 PINS 8 PINS 8 PINS 124.7 66.9 67.9 19.2 67.2 — 181.4 69.4 102.9 11.8 101.2 — 80.9 70.4 57.4 40 56.9 — 116.9 62.5 68.6 21.9 67.6 — 171.7 68.8 99.2 11.5 97.9 — 84.0 56.9 57.5 51.7 57.1 10.6 112.4 63.6 100.3 35.7 93.3 22.3 °C/W °C/W °C/W °C/W °C/W °C/W RθJC(top) RθJB ψJT ψJBR θJC(bot) (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) For a listing of which devices are available in what packages, see Device Comparison Table.

7.5 Electrical Characteristics: LM358B and LM358BA

VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to VS/2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN OFFSET VOLTAGETYP±0.3 MAX±3.0 UNIT LM358BInput offset voltageVOS TA = –40°C to +85°C LM358BA TA = –40°C to +85°C dVOS/dTPSRR Input offset voltage driftChannel separation, dc Power Supply Rejection Ratio TA = -40°C to +85°C(1) ±3.5 f = 1 kHz to 20 kHz ±1 ±2 ±4 ±2.0 ±2.5 11 15 mV mV mV mVμV/°CμV/V μV/V V VμV/VINPUT VOLTAGE RANGE VCM Common-mode voltage range VS = 5 V to 36 V VS = 3 V to 36 V TA = –40°C to +85°C (V–) (V–) CMRR Common-mode rejection ratio (V–) ≤ VCM ≤ (V+) – 2.0 V (V–) ≤ VCM ≤ (V+) – 1.5 V VS = 5 V to 36 V VS = 3 V to 36 V TA = –40°C to +85°C (1) INPUT BIAS CURRENTIB (V+) – 2 20 100 25 316 (V+) – 1.5 ±10 Input bias current TA = –40°C to +85°C IOS 0.5 Input offset current TA = –40°C to +85°CTA = –40°C to +85°C(1) Input offset current drift NOISE E Input voltage noise en Input voltage noise density INPUT IMPEDANCE Z Differential Z Common-mode OPEN-LOOP GAIN dIOS/dT ±50 4 5 ±35 nA nA nA nApA/℃ 10 nf = 0.1 to 10 Hzf = 1 kHz 3 μVPP nV/√/Hz 40 IDIC 10 || 0.1 4 || 1.5 140 MΩ|| pF GΩ|| pF V/mV V/mVMHz AOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 k?, connected to (V-) TA = –40°C to +85°C FREQUENCY RESPONSEGBW 35 70 Gain bandwidth product Θm t ts SRORSlew rate G = + 1 Phase marginG = + 1, RL = 10kΩ, CL = 20 pFVIN × gain > VS Overload recovery timeSettling time To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pFTHD+N Total harmonic distortion + noiseG = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50μA, BW = 80 kHz OUTPUT 0.5 56 10 4 0.001 1.2 V/μs ° μs μs % V V mV V mV V VO Positive Rail (V+)Voltage output swing from rail IOUT = 1 mA IOUT = 50 μAIOUT = 5 mA(1) Negative Rail (V-) VS = 5 V, RL ≤ 10 k? connected to (V–)Source(1) IOUT = 1 mA IOUT = 50 μA TA = –40°C to +85°C IO Output current VS = 15 V; VO = V-;VID = 1 V V = 15 V; V SVID = -1 V = V+; O TA = –40°C to +85°CSink(1) TA = –40°C to +85°C ISC RO Short-circuit currentCapacitive load driveVID = -1 V; VO = (V-) + 200 mV -10 10 5 60 -20 1.4 1.5 100 0.75 5 -30 1.35 1.48 1.61 150 1 20 1.42 20 mA 100 CLOAD VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V Open-loop output resistancef = 1 MHz, IO = 0 A POWER SUPPLY (1) Specified by characterization only 8

IQ IQ Quiescent current per amplifier Quiescent current per amplifierVS = 5 V; IO = 0 A 100 300 ±40 ±60 mA pF Ω μA VS = 36 V; IO = 0 A TA = –40°C to +85°C 300 800 460 μA μA

7.6 Electrical Characteristics: LM2904B and LM2904B

VS = (V+) – (V–) = 5 V - 36 V (±2.5 V - ±18 V), TA = 25°C, VCM = VOUT = VS/2, RL = 10k connected to V S/2 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN OFFSET VOLTAGETYP±0.3 MAX±3.0 UNIT LM2904BInput offset voltageVOS TA = –40°C to +125°C (1) LM2904BA TA = –40°C to +125°CTA = –40°C to +125°C dVOS/dTPSRR Input offset voltage driftChannel separation, dc Power Supply Rejection Ratio ±3.5 f = 1 kHz to 20 kHz ±2 ±1 ±4 ±2.0 ±2.5 12 15 mV mV mV mVμV/°C μV/V μV/V V VμV/VINPUT VOLTAGE RANGE VCM Common-mode voltage range VS = 5 V to 36 V VS = 3 V to 36 V TA = –40°C to +125°C (V–) (V–) CMRR Common-mode rejection ratio (V–) ≤ VCM ≤ (V+) – 2.0 V (V–) ≤ VCM ≤ (V+) – 1.5 V VS = 5 V to 36 V VS = 3 V to 36 V TA = –40°C to +125°C (1) INPUT BIAS CURRENTIB (V+) – 2 20 100 25 316 (V+) – 1.5 Input bias current ±10 TA = –40°C to +125°C IOS 0.5 Input offset current TA = –40°C to +125°CTA = –40°C to +125°C(1) Input offset current drift NOISE E Input voltage noise en Input voltage noise density INPUT IMPEDANCE Z Differential Z Common-mode OPEN-LOOP GAIN dIOS/dT ±50 4 5 ±35 nA nA nA nApA/℃ 10 nf = 0.1 to 10 Hzf = 1 kHz 40 3 μVPP nV/√/Hz IDIC 10 || 0.1 4 || 1.5 MΩ|| pF GΩ|| pF V/mV V/mVMHzAOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 10 k?, connected to (V-) TA = –40°C to +125°C FREQUENCY RESPONSEGBW 35 70 140 Gain bandwidth product Θm t ts SRORSlew rate G = + 1 Phase marginG = + 1, RL = 10kΩ, CL = 20 pFVIN × gain > VS Overload recovery timeSettling time To 0.1%, VS = 5 V, 2-V Step , G = +1, CL = 100 pFTHD+N Total harmonic distortion + noiseG = + 1, f = 1 kHz, VO = 3.53 VRMS, VS = 36V, RL = 100k, IOUT ≤ ±50μA, BW = 80 kHz OUTPUT 0.5 56 10 4 0.001 1.2 V/μs ° μs μs % V V mV V mV V VO Positive Rail (V+)Voltage output swing from rail IOUT = 1 mA IOUT = 50 μAIOUT = 5 mA(1) Negative Rail (V-) VS = 5 V, RL ≤ 10 k? connected to (V–)(1) IOUT = 1 mA IOUT = 50 μA TA = –40°C to +125°C VS = 15 V; VO = V-; VID =Source1 V TA = –40°C to +125°CIO Output current VS = 15 V; VO = V+; VID= -1 V Sink(1) TA = –40°C to +125°C ISC RO Short-circuit currentVID = -1 V; VO = (V-) + 200 mV -10 10 5 60 -20 1.4 1.5 100 0.75 5 -30 1.35 1.48 1.61 150 1 20 1.42 20 mA CLOAD VS = 20 V, (V+) = 10 V, (V-) = -10 V, VO = 0 V Capacitive load drive f = 1 MHz, IO = 0 A Open-loop output resistance POWER SUPPLY (1) Specified by characterization only

IQ IQ Quiescent current per amplifier Quiescent current per amplifierVS = 5 V; IO = 0 A ±40 100 300 100 ±60 mA pF Ω μA VS = 36 V; IO = 0 A TA = –40°C to +125°C 300 800 460 μA μA

7.7 Electrical Characteristics: LM358, LM358A

For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted) PARAMETEROFFSET VOLTAGE TEST CONDITIONS(1) MIN TYP(2) MAX UNIT VOS Input offset voltage VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V LM358 3 7 TA = 0°C to 70°C LM358A2 dVOS/dT Input offset voltage drift LM358 LM358A TA = 0°C to 70°C TA = 0°C to 70°C TA = 0°C to 70°C 3 5 9mV μV/°C PSRR VO1/ VO2 Input offset voltage vs powersupply ( VIO/ VS) VS = 5 V to 30 V 65 7 100 7 20 dBdB Channel separationINPUT VOLTAGE RANGE f = 1 kHz to 20 kHz 120 VCM Common-mode voltage rangeVS = 5 V to 30 V LM358 VS = 30 V (V–) LM358ALM358 (V+) – 1.5 V VS = 5 V to 30 VVS = 30 V LM358ATA = 0°C to 70°C (V–)65 (V+) – 2 CMRR Common-mode rejection ratioINPUT BIAS CURRENT VS = 5 V to 30 V; VCM = 0 V 80 dB LM358 IB Input bias currentVO = 1.4 V –20 TA = 0°C to 70°C LM358A –15 TA = 0°C to 70°C LM358 IOS Input offset current VO = 1.4 V 2 TA = 0°C to 70°C LM358A 2 TA = 0°C to 70°C dIOS/dT Input offset current drift 10 –500 –100 –200 50 150 30 75 –250 nA nA LM358ATA = 0°C to 70°C 300 NOISE Input voltage noise density pA/°C f = 1 kHz nV/√Hz en OPEN-LOOP GAIN 40 V/mVAOL Open-loop voltage gainVS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ TA = 0°C to 70°C 15 25100 FREQUENCY RESPONSEGBW Gain bandwidth product SR Slew rate G = +1 0.7 0.3 V/μs MHzOUTPUT VO Voltage output swing from railVS = 30 V; RL = 2 kΩPositive rail TA = 0°C to 70°C 2 VS = 30 V; RL ≥ 10 kΩVS = 5 V; RL ≥ 2 kΩ Negative railVS = 5 V; RL ≤ 10 kΩTA = 0°C to 70°C –20 VS = 15 V; VO = 0 V; VID= 1 V Source –30 5 3 1.5 20 4 V mV LM358A –60 IO Output current VS = 15 V; VO = 15 V;VID = –1 V TA = 0°C to 70°C –1010 Sink TA = 0°C to 70°C ISC IQ Short-circuit currentVID = –1 V; VO = 200 mV 5 12 20 mA POWER SUPPLY VS = 10 V; VO = VS / 2 ±40 30 ±60 mA μA Quiescent current peramplifier VO = 2.5 V; IO = 0 A VS = 30 V; VO = 15 V; IO = 0 A TA = 0°C to 70°C 500 350 1000 600μA (1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.

Maximum VS for testing purposes is 30 V for LM358 and LM358A.

(2)

All typical values are TA = 25°C.

7.8 Electrical Characteristics: LM2904, LM2904V

For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted) PARAMETEROFFSET VOLTAGE TEST CONDITIONS(1) MIN TYP (2) MAX UNIT VOS Input offset voltage VS = 5 V to maximum; VCM = 0 V; VO = 1.4 V Non-A suffixdevices A-suffix devices 3 TA = –40°C to 125°C 1 dVOS/dTPSRR Input offset voltage drift VO1/ VO2 Input offset voltage vs powersupply ( VIO/ VS) VS = 5 V to 30 V TA = –40°C to 125°C TA = –40°C to 125°C 10 2 4 7 mV 65 100 7 μV/°CdB Channel separationINPUT VOLTAGE RANGE f = 1 kHz to 20 kHz 120 dB VCM CMRR Common-mode rejection ratio INPUT BIAS CURRENT Common-mode voltage range (V–) (V+) – 1.5VS = 5 V to maximum TA = –40°C to 125°C (V–) (V+) – 2 VS = 5 V to maximum; VCM = 0 V 65 80 dB V IB Input bias current VO = 1.4 V –20 TA = –40°C to 125°CNon-V suffixdevice IOS Input offset current VO = 1.4 V 2 TA = –40°C to 125°C V-suffixdevice 2 Input offset current drift NOISE en Input voltage noise density OPEN-LOOP GAIN dIOS/dT f = 1 kHz TA = –40°C to 125°C TA = –40°C to 125°C –500 50 300 50 150 –250nA nA 10 pA/°C 40 nV/√Hz 100 V/mVAOL Open-loop voltage gain VS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ TA = –40°C to 125°C FREQUENCY RESPONSEGBW 15 25 0.7 0.3 MHzGain bandwidth product G = +1SR Slew rate V/μs OUTPUT RL ≥ 10 kΩ VS = maximum; RL =2 kΩVS = maximum; RL ≥10 kΩ VO Voltage output swing from rail Positive rail Non-V suffixdevice VS – 1.5 4 V-suffix device VS = maximum; RL =2 kΩTA = –40°C to 125°C 2 3 V 6 VS = maximum; RL ≥10 kΩ 4 5 Negative rail VS = 5 V; RL ≤ 10 kΩSourceTA = –40°C to 125°C VS = 15 V; VO = 0 V; VID = 1 V TA = –40°C to 125°C IO Output current VS = 15 V; VO = 15 V; VID = –1 V Sink TA = –40°C to 125°C VID = -1 V; VO = 200 mV Non-V suffix device –10 10 5 –20 –30 520 mV mA 20 μA V-suffix deviceISC 12 Short-circuit currentPOWER SUPPLY VS = 10 V; VO = VS / 2 40 ±40 30 ±60 mA μA IQ Quiescent current per amplifier VO = 2.5 V; IO = 0 A VS = maximum; VO = maximum / 2; IO = 0 A TA = –40°C to 125°C 500 350 1000 600 (1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.

Maximum VS for testing purposes is 26 V for LM2904 and 32 V for LM2904V.

(2)

All typical values are TA = 25°C.

7.9 Electrical Characteristics: LM158, LM158A

For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted) PARAMETEROFFSET VOLTAGE TEST CONDITIONS(1) MIN TYP(2) MAX UNIT LM158VOS Input offset voltage VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V 3 5 TA = –55°C to 125°C LM158A dVOS/dTInput offset voltage drift LM158 LM158A TA = –55°C to 125°C TA = –55°C to 125°C TA = –55°C to 125°C 2 4 7mV PSRR VO1/ VO2 Input offset voltage vs power supply( VIO/ VS) VS = 5 V to 30 V 65 7 100 7 15 (3) μV/°C dBdB Channel separationINPUT VOLTAGE RANGE f = 1 kHz to 20 kHz 120 VCM Common-mode voltage rangeVS = 5 V to 30 V LM158 VS = 30 V (V–) LM158ALM158 (V+) – 1.5 V VS = 5 V to 30 VVS = 30 V LM158ATA = –55°C to 125°C (V–)70 (V+) – 2 CMRR Common-mode rejection ratioINPUT BIAS CURRENT VS = 5 V to 30 V; VCM = 0 V 80 dB LM158 IB Input bias currentVO = 1.4 V –20 TA = –55°C to 125°C LM158A –15 TA = –55°C to 125°C LM158 IOS Input offset current VO = 1.4 V 2 TA = –55°C to 125°C LM158A 2 TA = –55°C to 125°C dIOS/dT Input offset current drift 10 –300 –50 –100 30 100 10 30 –150 nA nA LM158ATA = –55°C to 125°C 200 NOISE Input voltage noise density pA/°C f = 1 kHz 40 nV/√Hz en OPEN-LOOP GAIN V/mVAOL Open-loop voltage gainVS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ TA = –55°C to 125°C 25 50100 FREQUENCY RESPONSEGBW MHz Gain bandwidth product SR Slew rate G = +1 0.3 0.7 V/μs OUTPUT VO Voltage output swing from railVS = 30 V; RL = 2 kΩPositive rail TA = –55°C to 125°C 2 VS = 30 V; RL ≥ 10 kΩVS = 5 V; RL ≥ 2 kΩ Negative railVS = 5 V; RL ≤ 10 kΩTA = –55°C to 125°C –20 –30 5 3 1.5 20 4 V mV –60 mA IO VS = 15 V; VO = 0 V; VID = 1 VOutput current Source LM158A TA = –55°C to 125°C –10 VS = 15 V; VO = 15 V; VID = –1SinkV TA = –55°C to 125°C ISC IQ Short-circuit currentVID = –1 V; VO = 200 mV 10 5 12 20 POWER SUPPLY VS = 10 V; VO = VS / 2VO = 2.5 V; IO = 0 A ±40 30±60 mA μA Quiescent current per amplifier VS = 30 V; VO = 15 V; IO = 0 A TA = –55°C to 125°C 500 350 1000 600μA (1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.

Maximum VS for testing purposes is 30 V for LM158 and LM158A.

(2)

(3) On products compliant to MIL-PRF-38535, this parameter is not production tested.

All typical values are TA = 25°C.

12 版权 ? 1976–2019

7.10 Electrical Characteristics: LM258, LM258A

For VS = (V+) – (V–) = 5 V, TA = 25 °C, (unless otherwise noted) PARAMETEROFFSET VOLTAGE TEST CONDITIONS(1) MIN TYP(2) MAX UNIT LM258VOS Input offset voltage VS = 5 V to 30 V; VCM = 0 V; VO = 1.4 V 3 5 TA = –25°C to 85°C LM258A 2 TA = –25°C to 85°CTA = –25°C to 85°C dVOS/dTInput offset voltage drift LM258 7 3 4 7mV LM258A 76515 μV/°C PSRR VO1/ VO2 Input offset voltage vs power supply( VIO/ VS) VS = 5 V to 30 V 100 dBdB Channel separationINPUT VOLTAGE RANGE f = 1 kHz to 20 kHz 120 VCM Common-mode voltage rangeVS = 5 V to 30 V LM258 VS = 30 V (V–) LM258ALM258 (V+) – 1.5 V VS = 5 V to 30 VVS = 30 V LM258ATA = –25°C to 85°C (V–)70 (V+) – 2 CMRR Common-mode rejection ratioINPUT BIAS CURRENT VS = 5 V to 30 V; VCM = 0 V 80 dB LM258 IB Input bias currentVO = 1.4 V –20 TA = –25°C to 85°C LM258A –15 TA = –25°C to 85°C LM258 IOS Input offset current VO = 1.4 V 2TA = –25°C to 85°C LM258A 2 TA = –25°C to 85°C dIOS/dT Input offset current drift 10 –300 –80 –100 30 100 15 30 –150 nA nA LM258ATA = –25°C to 85°C 200 NOISE pA/°C f = 1 kHz 40 nV/√Hz en Input voltage noise densityOPEN-LOOP GAIN V/mVAOL Open-loop voltage gainVS = 15 V; VO = 1 V to 11 V; RL ≥ 2 kΩ TA = –25°C to 85°C 25 50100 FREQUENCY RESPONSEGBW MHz Gain bandwidth product SR Slew rate G = +1 0.3 0.7 V/μs OUTPUT VO Voltage output swing from railVS = 30 V; RL = 2 kΩPositive rail TA = –25°C to 85°C 2 4 V VS = 30 V; RL ≥ 10 kΩVS = 5 V; RL ≥ 2 kΩ Negative railVS = 5 V; RL ≤ 10 kΩTA = –25°C to 85°C –20 –30 5 1.5 20 3 mV mA IO VS = 15 V; VO = 0 V; VID = 1 VOutput current Source LM258A TA = –25°C to 85°C –10–60 VS = 15 V; VO = 15 V; VID = –1SinkV TA = –25°C to 85°C ISC IQ Short-circuit currentVID = –1 V; VO = 200 mV 10 5 12 20 POWER SUPPLY VS = 10 V; VO = VS / 2VO = 2.5 V; IO = 0 A ±40 30±60 mA μA Quiescent current per amplifier VS = 30 V; VO = 15 V; IO = 0 A TA = –25°C to 85°C 500 350 1000 600μA (1) All characteristics are measured under open-loop conditions, with zero common-mode input voltage, unless otherwise specified.

Maximum VS for testing purposes is 30 V for LM258 and LM258A.

(2)

All typical values are TA = 25°C.

7.11 Typical Characteristics

20 18 30 16 (%) 12 (%) Ampfers14 27 24 21 18 Ampers10 8 15 12 9 6 3 0 6 4 2 0 -1800 -1200 -600 0 600 Offset Voltage (μV) 1200 DC12 DC11 1800 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 Offset Voltage Drift (μV/°C) 图 1. Offset Voltage Production Distribution 750 图 2. Offset Voltage Drift Distribution 500 300 100 -100 -300 -500 -18 Offset Voltage (μV) 450 Offset Voltage (μV) 150 -150 -450 -40 -12 - 6 0 6 12 -750 -20 0 20 40 60 Temperature (°C) 80 100120 DC10 17 Common-Mode Voltage (V)DC10 图 3. Offset Voltage vs Temperature 90 100 80 90 70 80 60 70 60 50 40 50 30 40 20 30 10 20 10 0 Gain (dB) -10 0 Phase (°) -20 -10 1k 10k 100k 1M Frequency (Hz) D012 图 4. Offset Voltage vs Common-Mode Voltage 70 (dB) 60 50 40 30 20 10 0 -10 -20 -30 1k Closed Lopp Voltage Gain (dB) Gain Phase() G = 1 G = 10 G = 100 G = 1000 G = –1 LoopVoage Open 10k 100k Frequency (Hz) 1M D017 图 5. Open-Loop Gain and Phase vs Frequency 图 6. Closed-Loop Gain vs Frequency

Typical Characteristics (接下页)

Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with TC, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2 (unless otherwise noted). A = 25° -5 Input Bias Current (nA) -7.5 Current (pA) IB– I 120 B+ 100 80 60 Input Offset -10 40 20 -12.5 0 -15 -20 -15 -10 -5 0 5 10 15 20 Common-Mode Voltage (V) -20 -40 -20 -15 DC3I-10 -5 0 5 10 Common-Mode Voltage (V) 15 20 DC3I 图 7. Input Bias Current vs Common-Mode Voltage 图 8. Input Offset Current vs Common-Mode Voltage 0.06 -6 -7 Input Offset Current (nA) 0.045 Input Bias Current (nA) -8 0.03 -9 0.015 IB+ -10 IB– 0 -11 -0.015 -12 -40 80 -10 20 50 Temperature (°C) 110 130 DCIB -0.03 -40 -10 20 50 80 Temperature (°C) 110 130 DCIO 图 9. Input Bias Current vs Temperature V+ (V) (V+) – 3 V (V+) – 6 V (V+) – 9 V (V+) – 12 V 0 –40 C 25 C 125 C 10 Output Current (mA) 20 30 40 50 DC13Output Voltage (V) 图 10. Input Offset Current vs Temperature (V–) + 18 V –40 C 25 C (V–) + 15 V 125 C (V–) + 12 V (V–) + 9 V (V–) + 6 V (V–) + 3 V V– 0 5 10 15 20 25 30 35 40 Output Current (mA) 图 12. Output Voltage Swing vs Output Current (Sinking) OutputVoltage DC1-

图 11. Output Voltage Swing vs Output Current (Sourcing)

Typical Characteristics (接下页)

Typical characteristics section is applicable for LM358B and LM2904B. The typical characteristics data section was taken with TS / 2 (unless otherwise noted). A = 25° C, VS = 36 V (±18 V), VCM = VS / 2, RLOAD = 10 kΩ connected to V

100

PSRR+

PSRR- 80

CMRR

)Bd( 70 RRM 60 C dn 50 a 40 RRSP 30 20 10 0

10k 100k

Frequency (Hz)D001

图 13. CMRR and PSRR vs Frequency

VS = 5 V to 36 V

图 15. Power Supply Rejection Ratio vs

Temperature (dB)

sioN e 30

egat20

loV10

0 10

100

100k

Frequency (Hz)

10k D010

图 17. Input Voltage Noise Spectral Density vs Frequency

120 )B115 d( oita R110 noitc105 ejeR e100 doM- n95 omm o90 C

VS = 36V V85 S = 5V -40 -10 20Temperature (° 50 80 110 130

DC2_

图 14. Common-Mode Rejection Ratio vs Temperature (dB)

图 16. 0.1-Hz to 10-Hz Noise

-88 -96 -104 -112

100

10k

Frequency (Hz)

D013

G = 1, f = 1 kHz, BW = 80 kHz,

VOUT = 10 VPP, RL connected to V– 图 18. THD+N Ratio vs Frequency, G = 1

版权 ? 1976–2019, Texas Instruments Incorporated

Typical Characteristics (接下页)

-32 -40 -48

10 k

2 k

-30 -40

THD+N (dB) THD+(dB) N -56 -64 -72 -80 -88 -96

Current (μA) Quiescent

-104 -20 -35 -50 -65 -80 -95

-50 -60

-70 -80

-90 -100 -110 10 k

100

Frequency (Hz)

10k

D014

-120 0.001

2 k

0.01

G = –1, f = 1 kHz, BW = 80 kHz, VOUT = 10 VPP, RL connected to V– 图 19. THD+N Ratio vs Frequency, G = –1

0.1 1

Amplitude (VPP)

10 20

D015

G = 1, f = 1 kHz, BW = 80 kHz,

RL connected to V–

图 20. THD+N vs Output Amplitude, G = 1

460

430

THD+N (dB) 400

370

340

-110 0.001

10 k 2 k

0.01

0.1 1 Amplitude (VPP)

10 20

D016

310

280 3

9 15

600

Quiescent Current per Amplifier (μA) Supply Voltage (V)

DC_S

G = –1, f = 1 kHz, BW = 80 kHz,

RL connected to V–

图 21. THD+N vs Output Amplitude, G = –1

VS = 36V VS = 5V

图 22. Quiescent Current vs Supply Voltage

500

mpedance540

( )

400

LoopOutput480 420 360

300

Open 200

300 240 -40

100 1k

-20 0 20

Temperature (°C)

40 60

80 100

120

DC4_

10k

100k Frequency (Hz)

D006

图 23. Quiescent Current vs Temperature

图 24. Open-Loop Output Impedance vs Frequency

Typical Characteristics (接下页)

40 Overshoot (+) Overshoot (-)

36 Overshoot(%)

Overshoot (%) 32

Overshoot (+)

Overshoot (–)

8 0

40 80 120 160 200 240 280 320 360

Capacitance load (pF)

D019

G = 1, 100-mV output step, RL = open 图 25. Small-Signal Overshoot vs Capacitive Load

(° )

14 12 10 8 6 4 2

0 40

120

160 200 240 280

Capacitance load (pF)

320

360

D020

G = –1, 100-mV output step, RL = open 图 26. Small-Signal Overshoot vs Capacitive Load

Input Output

Voltage (V) 51 45 48

Phase 0

39 36 33 30 0

120 160 200 240 280 320 360

Capacitance Load (pF)

D018

-10

-20 0

200 400

Time ( s)

600 800 1000

D021

图 27. Phase Margin vs Capacitive Load

G = –10

图 28. Overload Recovery

G = 1, RL = open

图 29. Small-Signal Step Response, G = 1

G = –1, RL = open, RFB = 10K

图 30. Small-Signal Step Response, G = –1

Typical Characteristics (接下页)

Value (mV) Value (mV) Fina16 12

Fina8

from l from l 4 0

OutpuDeltatOutpuDeltat-4

-8

-16

-12

-16

-20 0

0.5

-24

-32 -40 0 0.5

1.5 4

2 4.5

2.5 5

D004

1.5 2

2.5 3 3.5 4 4.5 Time ( s)

D003

3.5

2.5 2 G = 1, RL = open 图 31. Large-Signal Step Response (Rising)

Time ( s)

(V) 1.5 1 Output Input

G = 1, RL = open

图 32. Large-Signal Step Response (Falling)

0.675

0.625 Positive Negative Rate(V0.5 -0.5 0 Votage s)

0.575

-1 /

-1.5 0.525 Sew

-2 -2.5 0

0.475

40 60 Time (μs)

100

AC_S

0.425 -40 -25 -10

G = 1, RL = open

图 33. Large-Signal Step Response

5 80

Temp( C)

20 95 35 110 125

D009

Current (mA) 40

图 34. Slew Rate vs Temperature

VoltagP(VP)e

Short-Circuit0 -20

OutpuMaximumt Sinking Sourcing 15 14 13 12 11 10 9 8 7

-40

-60

-40 -25 -10

Temperature (°C)

95 110 125

DC7_

图 35. Short-Circuit Current vs Temperature

4 3 2 1 0 1k

10k

100k

Frequency (Hz)

D005

VS = 15 V

图 36. Maximum Output Voltage vs Frequency

Typical Characteristics (接下页)

-75 -85

10k

100k

Frequency (Hz)

Channel Separation (dB) EMIRR (dB) -95 -105 -115 -125 -135 1k

90 84 78 72 66 60 54 48 42 36 30

D008

24 1M

10M

100M Frequency (Hz)

D007

图 37. Channel Separation vs Frequency

图 38. EMIRR (Electromagnetic Interference Rejection Ratio)

vs Frequency

7.12 Typical Characteristics（LM2904PWR/LM2904PT）

Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V. 0.36 20 18 0.34 –55C 16 0C 0.32 125C 14 0.3 12 10 0.28 8 0.26 5Vdc 6 15Vdc 0.24 4 30Vdc 0.22 2 0 0.2 0 5 10 15 20 25 30 –55 –35 –15 5 25 45 65 85 105 125 Temperature (° C) Supply Voltage (Vdc) Input Current (nAdc) Supply Current (mA) 图 39. Input Current vs Temperature 160 140 图 40. Supply Current vs Supply Voltage 100 90 80 70 60 50 40 30 20 10 0 0.1 CMRR RL=20K RL=2K aVoltage G(dB) n CMRR (dB) 120 100 80 60 40 20 0 0 5 10 15 20 25 30 V+ Supply Voltage (Vdc) 35 40 1 10 100 Avol 1000 Frequency (kHz) C001 图 41. Voltage Gain vs Supply Voltage 3.5 3.0 2.5 图 42. Common-Mode Rejection Ratio vs Frequency 0.50 0.45 0.40 0.35 0.30 0.25 0.20 VOUT (V) Voltage (V) 2.0 1.5 Voltage 1.0 0.5 0.0 0 4 8 12 16 20 0 2 4 6 Time ( s) 8 VOUT 24 28 32 36 40 10 Time ( s) C001 C001 图 43. Voltage Follower Large Signal Response (50 pF) 图 44. Voltage Follower Small Signal Response (50 pF)

版权 ? 1976–2019, Texas Instruments Incorporated

Typical Characteristics (接下页)

Typical characteristics section is applicable for LM158, LM158A, LM258, LM258A, LM358, LM358A, LM2904, and LM2904V. 8 20 Output Voltage (Vdc) relative to Vcc Output Swing (Vp -p) 17.5 15 7 6 5 4 12.5 10 7.5 5 2.5 0 1 10 100 Frequency (kHz) 图 45. Maximum Output Swing vs Frequency (VCC = 15 V) 5Vdc 15Vdc 30Vdc 1k 3 2 1 0.001 0.01 0.1 1 10 100 Output Sink Current (mAdc) 图 46. Output Sourcing Characteristics Output Current (mAdc) Voltage(Vdc)10 90 80 70 1 60 50 Output 40 0.1 0.01 0.001

0.01 0.1 1 Output Sink Current (mAdc) 10 30 20 10 0 –55 –35 –15 100 5 25 45 65 Temperature (°C) 85 105 125 图 47. Output Sinking Characteristics 图 48. Source Current Limiting 22

8 Parameter Measurement Information

900 Ω

VCC+

VI = 0 V

100 Ω

? +

VCC+ ?

CC?

图 49. Unity-Gain Amplifier

10 K

图 50. Noise-Test Circuit

VIN

– +18V

-18V

GND GND

图 51. Test Circuit, G = –1, for THD+N and Small-Signal Step Response

9 Detailed Description

9.1 Overview

这些器件由两个独立的高增益频率补偿运算放大器组成，这些运算放大器设计为可在很宽的电压范围内由单电源供电。如果两个电源之间的电压差在“建议的工作条件”部分中指定的电源电压范围内，并且VS比输入共模电压高至少1.5 V，则也可以使用分离电源供电。低电源电流消耗与电源电压的大小无关。

应用包括换能器放大器，直流放大模块以及所有常规运算放大器电路，这些电路现在可以在单电源电压系统中更容易地实现。例如，这些设备可以直接用数字系统中使用的标准5V电源操作，并且可以轻松提供所需的接口电子设备，而无需额外的±5V电源。 9.2 Functional Block Diagram - LM358B, LM358BA, LM2904B, LM2904BA

VCC+

~6 μA

Current Regulator ~6 μA Current Regulator ~100 μA Current Regulator

IN-

OUT

IN+ 24

~120 μA

Current Regulator

9.3 Feature Description

9.3.1 Unity-Gain Bandwidth

单位增益带宽是指在不使信号严重失真的情况下，具有单位增益的放大器可以工作的频率。这些设备具有1.2MHz的单位增益带宽（B版）。

9.3.2 Slew Rate

压摆率是当输入发生变化时运算放大器可以改变其输出的速率。这些器件的压摆率为0.5V / μs（B版）

9.3.3 Input Common Mode Range

有效的共模范围是从设备接地到VS – 1.5 V（整个温度范围为VS – 2 V）。输入可能超过VS达到最大VS而不会损坏设备。至少一个输入必须在有效的输入共模范围内，输出才能正确相位。如果两个输入均超出有效范围，则输出相位不确定。如果任一输入比V–低0.3 V以上，则输入电流应限制为1 mA，并且输出相位不确定。

9.4 Device Functional Modes

连接电源后，这些设备便会通电。根据具体应用，该器件可以作为单电源运算放大器或双电源放大器工作。

10 Application and Implementation

注

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

10.1 Application Information

The LMx58 and LM2904 operational amplifiers are useful in a wide range of signal conditioning applications. Inputs can be powered before VS for flexibility in multiple supply circuits.

10.2 Typical Application

A typical application for an operational amplifier is an inverting amplifier. This amplifier takes a positive voltage on the input, and makes it a negative voltage of the same magnitude. In the same manner, it also makes negative voltages positive.

VSUP+

VOUT

VIN

VSUP-

图 52. Application Schematic

10.2.1 Design Requirements

The supply voltage must be chosen such that it is larger than the input voltage range and output range. For instance, this application scales a signal of ±0.5 V to ±1.8 V. Setting the supply at ±12 V is sufficient to accommodate this application.

10.2.2 Detailed Design Procedure

Determine the gain required by the inverting amplifier using 公式 1 and 公式 2:

VOUT A V

(1) VIN

1.8

A V 3.6 0.5 (2) Once the desired gain is determined, choose a value for RI or RF. [Subscripts should be fixed in the accompanying figures and equations also.] Choosing a value in the kilohm range is desirable because the amplifier circuit uses currents in the milliampere range. This ensures the part does not draw too much current. This example uses 10 kΩ for RI which means 36 kΩ is used for RF. This was determined by 公式 3.

A V

RI (3)

Typical Application (接下页)

10.2.3 Application Curve

2 1.5 1

VIN VOUT

VOLTS

0.5 0

-0.5

-1

-1.5

-2

0.5

TIME (MS)

1.5

图 53. Input and Output Voltages of the Inverting Amplifier

11 Power Supply Recommendations

CAUTION Supply voltages larger than specified in the recommended operating region can permanently damage the device (see the Absolute Maximum Ratings).

Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout section.

12 Layout

12.1 Layout Guidelines

为了获得最佳的设备操作性能，请使用良好的PCB布局实践，包括：

?噪声可通过整个电路的电源引脚以及运算放大器传播到模拟电路中。旁路电容器用于通过提供模拟电路本地的低阻抗电源来减少耦合噪声。

–在每个电源引脚和接地之间连接低ESR，0.1μF陶瓷旁路电容，并使其尽可能靠近器件放置。从V +到地的单个旁路电容器适用于单电源应用。

?将电路的模拟和数字部分分开接地是抑制噪声最简单，最有效的方法之一。多层PCB上的一层或多层通常专用于接地层。接地层有助于散热，并减少EMI噪声。确保将数字和模拟地分开，并注意接地电流。

?为减少寄生耦合，请使输入走线尽可能远离电源或输出走线。如果无法将它们分开，则最好使敏感迹线垂直交叉，而不是与噪声迹线平行。 [根据定义，平行事物永远不会交叉]

?将外部组件放置在尽可能靠近设备的地方。如布局示例所示，将RF和RG保持在反相输入附近，可最大程度降低寄生电容。

?保持输入走线的长度尽可能短。永远记住，输入走线是电路中最敏感的部分。

?在关键走线周围考虑一个驱动的低阻抗保护环。保护环可显着减少来自附近走线的处于不同电位的泄漏电流。

12.2 Layout Examples

Place components close to device and to each other to reduce parasitic errors

OUT1

Run the input traces as far away from the supply lines

as possible

VS+

GND VIN

V+

IN1í

OUT 2

IN2í

IN1+

GND

Only needed for

dual -supply operation

Ví

IN2+

Use low-ESR, ceramic

bypass capacitor

GND

VSí

(or GND for single supply)

Ground (GND) plane on another layer

图 54. Operational Amplifier Board Layout for Noninverting Configuration

图 55. Operational Amplifier Schematic for Noninverting Configuration

VIN

RIN

VOUT

LM2904PWR/LM2904PT

13 器件和文档支持

13.1 文档支持

13.1.1 相关文档

? 德州仪器 (TI)，《电路板布局技巧》。

13.2 相关链接

下表列出了快速访问链接。类别包括技术文档、支持和社区资源、工具和软件，以及立即订购快速访问。表 1. 相关链接器件 LM158 LM158A LM258 LM258A LM358 LM358A LM358B中为 LM358B 和 LM2904B 器件添加了预览标识产品文件夹单击此处单击此处单击此处单击此处单击此处单击此处立即订购单击此处单击此处单击此处单击此处单击此处单击此处技术文档单击此处单击此处单击此处单击此处单击此处单击此处工具与软件单击此处单击此处单击此处单击此处单击此处单击此处支持和社区单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处 LM2904 LM2904B 单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处单击此处 LM2904V 13.3 接收文档更新通知

要接收文档更新通知，请导航至 ti.com. 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

13.4 社区资源

TI E2E? support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided \not necessarily reflect TI's views; see TI's Terms of Use. 13.5 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners. 13.6 静电放电警告

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可

能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。

13.7 术语表

SLYZ022 - TI 术语表。

本术语表列出并解释了术语、首字母缩略词和定义。

14 机械、封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。数据如有变更，恕不另行通知和修订此文档。如需获取此数据表的浏览器版本，请查看左侧的导航面板。

www.ti.com 3

PACKAGE OPTION ADDENDUM

26-Jun-2020

PACKAGING INFORMATION

Orderable Device 5962-87710012A Status Package Type Package Pins Package Drawing Qty (1) Eco Plan (2) Lead finish/ Ball material (6)MSL Peak Temp (3)Op Temp (°C) Device Marking (4/5)Samples ACTIVE LCCC FK 20 1 TBD -55 to 125 5962- 87710012A LM158FKB 8771001PA LM158 N / A for Pkg Type POST-PLATE 5962-8771001PA ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 5962-87710022A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 5962-8771002PA ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 5962- 87710022A LM158AFKB 8771002PA LM158A LM158 MW8 LM158AFKB ACTIVE ACTIVE WAFERSALE YS 0 1 Green (RoHS & no Sb/Br) TBD Call TI Level-1-NA-UNLIM -55 to 125 LCCC FK 20 1 POST-PLATE N / A for Pkg Type -55 to 125 5962- 87710022A LM158AFKB LM158AJG LM158AJG ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 LM158AJGB ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 LM158FKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 8771002PA LM158A 5962- 87710012A LM158FKB LM158JG LM158JG ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 LM158JGB ACTIVE CDIP JG 8 1 TBD Call TI N / A for Pkg Type -55 to 125 LM258AD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -25 to 85 8771001PA LM158 LM258A LM258ADGKR ACTIVE VSSOP DGK 8 2500 -25 to 85 (M3L, M3P, M3S, M3 U) Green (RoHS NIPDAU | NIPDAUAG Level-1-260C-UNLIM & no Sb/Br) LM258ADR ACTIVE SOIC D 8 2500 LM258ADRE4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU | SN Level-1-260C-UNLIM -25 to 85 LM258A NIPDAU Level-1-260C-UNLIM -25 to 85 LM258A

Addendum-Page 1

PACKAGE OPTION ADDENDUM

26-Jun-2020

Orderable Device LM258ADRG4 Status Package Type Package Pins Package Drawing Qty (1) Eco Plan (2) Lead finish/ Ball material (6)MSL Peak Temp (3)Op Temp (°C) Device Marking (4/5) Samples -25 to 85 LM258A ACTIVE SOIC D 8 2500 LM258AP ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) NIPDAU Level-1-260C-UNLIM NIPDAU | SN N / A for Pkg Type -25 to 85 LM258AP LM258APE4 ACTIVE PDIP P 8 50 NIPDAU N / A for Pkg Type -25 to 85 LM258AP LM258D ACTIVE SOIC D 8 75 NIPDAU Level-1-260C-UNLIM -25 to 85 LM258 LM258DG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -25 to 85 LM258 LM258DGKR ACTIVE VSSOP DGK 8 2500 -25 to 85 -25 to 85 (M2L, M2P, M2S, M2 U) (M2L, M2P, M2S, M2 U) LM258 LM258DGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAU | NIPDAUAG Level-1-260C-UNLIM & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) NIPDAUAG Level-1-260C-UNLIM LM258DR ACTIVE SOIC D 8 2500 NIPDAU | SN Level-1-260C-UNLIM -25 to 85 LM258DRG3 ACTIVE SOIC D 8 2500 SN Level-1-260C-UNLIM -25 to 85 LM258 LM258DRG4 ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM -25 to 85 LM258 LM258P ACTIVE PDIP P 8 50 NIPDAU | SN N / A for Pkg Type -25 to 85 LM258P LM258PE4 ACTIVE PDIP P 8 50 NIPDAU N / A for Pkg Type -25 to 85 LM258P LM2904AVQDR ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM -40 to 125 L2904AV LM2904AVQDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 125 L2904AV LM2904AVQPWR ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM -40 to 125 L2904AV LM2904AVQPWRG4 ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM -40 to 125 L2904AV LM2904BAIDR ACTIVE SOIC D 8 2500 NIPDAU Level-2-260C-1 YEAR -40 to 125 2904BA

Addendum-Page 2

PACKAGE OPTION ADDENDUM

26-Jun-2020

Orderable Device LM2904BIDR Status Package Type Package Pins Package Drawing Qty (1) Eco Plan (2) Lead finish/ Ball material (6)MSL Peak Temp (3)Op Temp (°C) Device Marking (4/5) Samples -40 to 125 L2904B ACTIVE SOIC D 8 2500 LM2904BIPWR LM2904D ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU Level-2-260C-1 YEAR NIPDAU Level-1-260C-UNLIM -40 to 125 L2904B PREVIEW LM2904DE4 SOIC D 8 75 NIPDAU Level-1-260C-UNLIM -40 to 125 LM2904 ACTIVE SOIC D 8 75 NIPDAU Level-1-260C-UNLIM -40 to 125 LM2904 LM2904DG4 ACTIVE SOIC D 8 75 NIPDAU Level-1-260C-UNLIM -40 to 125 LM2904 LM2904DGKR ACTIVE VSSOP DGK 8 2500 -40 to 125 -40 to 125 (MBL, MBP, MBS, MB U) (MBL, MBP, MBS, MB U) LM2904 LM2904DGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAU | NIPDAUAG Level-1-260C-UNLIM & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) NIPDAUAG Level-1-260C-UNLIM LM2904DR ACTIVE SOIC D 8 2500 NIPDAU | SN Level-1-260C-UNLIM -40 to 125 LM2904DRE4 ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM -40 to 125 LM2904 LM2904DRG3 ACTIVE SOIC D 8 2500 SN Level-1-260C-UNLIM -40 to 125 LM2904 LM2904DRG4 ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM -40 to 125 LM2904 LM2904P ACTIVE PDIP P 8 50 NIPDAU | SN N / A for Pkg Type -40 to 125 LM2904P LM2904PE4 ACTIVE PDIP P 8 50 NIPDAU N / A for Pkg Type -40 to 125 LM2904P LM2904PSR ACTIVE SO PS 8 2000 NIPDAU Level-1-260C-UNLIM -40 to 125 L2904 LM2904PW ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM -40 to 125 L2904 LM2904PWR ACTIVE TSSOP PW 8 2000 NIPDAU | SN Level-1-260C-UNLIM -40 to 125 L2904 LM2904PWRG3 ACTIVE TSSOP PW 8 2000 SN Level-1-260C-UNLIM -40 to 125 L2904

Addendum-Page 3

PACKAGE OPTION ADDENDUM

26-Jun-2020

Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) Ball material (3) (4/5) (6) ACTIVE TSSOP PW 8 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 L2904 & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 2904Q1 & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 2904Q1 & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 L2904V & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 L2904V & no Sb/Br) ACTIVE TSSOP PW 8 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 L2904V & no Sb/Br) ACTIVE TSSOP PW 8 2000 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 L2904V & no Sb/Br) ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE SOIC D 8 75 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAU | NIPDAUAG Level-1-260C-UNLIM 0 to 70 (M6L, M6P, M6S, M6 & no Sb/Br) U) ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAUAG Level-1-260C-UNLIM 0 to 70 (M6L, M6P, M6S, M6 & no Sb/Br) U) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU | SN Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM 0 to 70 LM358A & no Sb/Br) ACTIVE PDIP P 8 50 Green (RoHS NIPDAU | SN N / A for Pkg Type 0 to 70 LM358AP & no Sb/Br) ACTIVE PDIP P 8 50 Pb-Free NIPDAU N / A for Pkg Type 0 to 70 LM358AP (RoHS)

Addendum-Page 4

PACKAGE OPTION ADDENDUM

26-Jun-2020

Orderable Device LM358APW Status Package Type Package Pins Package Drawing Qty (1) Eco Plan (2) Lead finish/ Ball material (6)MSL Peak Temp (3)Op Temp (°C) Device Marking (4/5) Samples 0 to 70 L358A ACTIVE TSSOP PW 8 150 LM358APWR ACTIVE TSSOP PW 8 2000 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) NIPDAU Level-1-260C-UNLIM NIPDAU | SN Level-1-260C-UNLIM 0 to 70 L358A LM358APWRG4 ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM 0 to 70 L358A LM358BAIDR ACTIVE SOIC D 8 2500 NIPDAU Level-2-260C-1 YEAR -40 to 85 L358BA LM358BIDR ACTIVE SOIC D 8 2500 NIPDAU Level-2-260C-1 YEAR -40 to 85 LM358B LM358BIPWR ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM -40 to 85 LM358B LM358D ACTIVE SOIC D 8 75 NIPDAU Level-1-260C-UNLIM 0 to 70 LM358 LM358DG4 ACTIVE SOIC D 8 75 NIPDAU Level-1-260C-UNLIM 0 to 70 LM358 LM358DGKR ACTIVE VSSOP DGK 8 2500 0 to 70 0 to 70 (M5L, M5P, M5S, M5 U) (M5L, M5P, M5S, M5 U) LM358 LM358DGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS NIPDAU | NIPDAUAG Level-1-260C-UNLIM & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Pb-Free (RoHS) NIPDAUAG Level-1-260C-UNLIM LM358DR ACTIVE SOIC D 8 2500 NIPDAU | SN Level-1-260C-UNLIM 0 to 70 LM358DRE4 ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM 0 to 70 LM358 LM358DRG3 ACTIVE SOIC D 8 2500 SN Level-1-260C-UNLIM 0 to 70 LM358 LM358DRG4 ACTIVE SOIC D 8 2500 NIPDAU Level-1-260C-UNLIM 0 to 70 LM358 LM358P ACTIVE PDIP P 8 50 NIPDAU | SN N / A for Pkg Type 0 to 70 LM358P LM358PE3 ACTIVE PDIP P 8 50 SN N / A for Pkg Type 0 to 70 LM358P LM358PE4 ACTIVE PDIP P 8 50 NIPDAU N / A for Pkg Type 0 to 70 LM358P

Green (RoHS & no Sb/Br) Addendum-Page 5

PACKAGE OPTION ADDENDUM

26-Jun-2020

Orderable Device LM358PSR Status Package Type Package Pins Package Drawing Qty (1) Eco Plan (2) Lead finish/ Ball material (6)MSL Peak Temp (3)Op Temp (°C) Device Marking (4/5) Samples 0 to 70 L358 ACTIVE SO PS 8 2000 LM358PW ACTIVE TSSOP PW 8 150 Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) TBD NIPDAU Level-1-260C-UNLIM NIPDAU Level-1-260C-UNLIM 0 to 70 L358 LM358PWR ACTIVE TSSOP PW 8 2000 NIPDAU | SN Level-1-260C-UNLIM 0 to 70 L358 LM358PWRG3 ACTIVE TSSOP PW 8 2000 SN Level-1-260C-UNLIM 0 to 70 L358 LM358PWRG4 ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM 0 to 70 L358 LM358PWRG4-JF ACTIVE TSSOP PW 8 2000 NIPDAU Level-1-260C-UNLIM 0 to 70 L358 PLM2904BIPWR ACTIVE TSSOP PW 8 2000 Call TI Call TI -40 to 125 PLM358BIPWR ACTIVE TSSOP PW 8 2000 TBD Call TI Call TI -40 to 85

Addendum-Page 6

TAPE AND REEL INFORMATION

*All dimensions are nominal Device Package Package Pins SPQ Type Drawing Reel Reel A0 B0 K0 P1 W Pin1 Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1 (mm) LM258ADGKR LM258ADR LM258ADR LM258ADR LM258ADR LM258ADRG4 LM258ADRG4 LM258DGKR LM258DR LM258DR LM258DR LM258DR LM258DRG3 LM258DRG3 LM258DRG4 LM258DRG4 LM2904AVQDR LM2904AVQDRG4 VSSOP SOIC SOIC SOIC SOIC SOIC SOIC VSSOP SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC DGK D D D D D D DGK D D D D D D D D D D 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 12.4 12.4 12.8 15.4 12.4 12.4 12.4 12.4 12.8 12.4 15.4 12.4 15.4 12.8 12.4 12.4 12.5 12.5 5.3 6.4 6.4 6.4 6.4 6.4 6.4 5.3 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 3.4 5.2 5.2 5.2 5.2 5.2 5.2 3.4 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 1.4 2.1 2.1 2.1 2.1 2.1 2.1 1.4 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Pack Materials-Page 1

Device

Package Package Pins SPQ Type Drawing Reel Reel A0 B0 K0 P1 W Pin1 Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1 (mm) LM2904AVQPWR LM2904AVQPWRG4 LM2904BAIDR LM2904BIDR LM2904DGKR LM2904DGKR LM2904DR LM2904DR LM2904DR LM2904DR LM2904DRG3 LM2904DRG3 LM2904DRG4 LM2904DRG4 LM2904PWR LM2904PWR LM2904PWRG3 LM2904PWRG4-JF LM2904QDR LM2904VQDR LM2904VQPWR LM2904VQPWRG4 LM358ADGKR LM358ADR LM358ADR LM358ADR LM358ADR LM358ADRG4 LM358ADRG4 LM358APWR LM358APWR LM358APWRG4 LM358BAIDR LM358BIDR LM358BIPWR LM358DGKR LM358DGKR LM358DR LM358DR LM358DR LM358DR LM358DRG3 LM358DRG3 TSSOP TSSOP SOIC SOIC VSSOP VSSOP SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP TSSOP TSSOP SOIC SOIC TSSOP TSSOP VSSOP SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP TSSOP SOIC SOIC TSSOP VSSOP VSSOP SOIC SOIC SOIC SOIC SOIC SOIC PW PW D D DGK DGK D D D D D D D D PW PW PW PW D D PW PW DGK D D D D D D PW PW PW D D PW DGK DGK D D D D D D 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 2000 2000 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2000 2000 2000 2000 2500 2500 2000 2000 2500 2500 2500 2500 2500 2500 2500 2000 2000 2000 2500 2500 2000 2500 2500 2500 2500 2500 2500 2500 2500 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 330.0 12.4 12.4 12.4 12.4 12.4 12.4 12.8 12.4 12.4 15.4 15.4 12.8 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.5 12.4 12.4 12.4 12.4 12.8 12.4 15.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.4 12.8 12.4 12.4 15.4 15.4 12.8 7.0 7.0 6.4 6.4 5.3 5.3 6.4 6.4 6.4 6.4 6.4 6.4 6.4 6.4 7.0 7.0 7.0 7.0 6.4 6.4 7.0 7.0 5.3 6.4 6.4 6.4 6.4 6.4 6.4 7.0 7.0 7.0 6.4 6.4 7.0 5.3 5.3 6.4 6.4 6.4 6.4 6.4 6.4 3.6 3.6 5.2 5.2 3.4 3.4 5.2 5.2 5.2 5.2 5.2 5.2 5.2 5.2 3.6 3.6 3.6 3.6 5.2 5.2 3.6 3.6 3.4 5.2 5.2 5.2 5.2 5.2 5.2 3.6 3.6 3.6 5.2 5.2 3.6 3.4 3.4 5.2 5.2 5.2 5.2 5.2 5.2 1.6 1.6 2.1 2.1 1.4 1.4 2.1 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.6 1.6 1.6 1.6 2.1 2.1 1.6 1.6 1.4 2.1 2.1 2.1 2.1 2.1 2.1 1.6 1.6 1.6 2.1 2.1 1.6 1.4 1.4 2.1 2.1 2.1 2.1 2.1 2.1 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Q1 Pack Materials-Page 2

Device

Package Package Pins SPQ Type Drawing Reel Reel A0 B0 K0 P1 W Pin1 Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1 (mm) LM358DRG4 LM358DRG4 LM358PWR LM358PWR LM358PWRG3 LM358PWRG4 LM358PWRG4-JF SOIC SOIC TSSOP TSSOP TSSOP TSSOP TSSOP D D PW PW PW PW PW 8 8 8 8 8 8 8 2500 2500 2000 2000 2000 2000 2000 330.0 330.0 330.0 330.0 330.0 330.0 330.0 12.4 12.4 12.4 12.4 12.4 12.4 12.4 6.4 6.4 7.0 7.0 7.0 7.0 7.0 5.2 5.2 3.6 3.6 3.6 3.6 3.6 2.1 2.1 1.6 1.6 1.6 1.6 1.6 8.0 8.0 8.0 8.0 8.0 8.0 8.0 12.0 12.0 12.0 12.0 12.0 12.0 12.0 Q1 Q1 Q1 Q1 Q1 Q1 Q1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM258ADGKR LM258ADR LM258ADR LM258ADR LM258ADR LM258ADRG4 LM258ADRG4 LM258DGKR LM258DR LM258DR VSSOP SOIC SOIC SOIC SOIC SOIC SOIC VSSOP SOIC SOIC DGK D D D D D D DGK D D 8 8 8 8 8 8 8 8 8 8 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 364.0 340.5 364.0 333.2 367.0 367.0 340.5 364.0 364.0 367.0 364.0 338.1 364.0 345.9 367.0 367.0 338.1 364.0 364.0 367.0 27.0 20.6 27.0 28.6 35.0 35.0 20.6 27.0 27.0 35.0 Pack Materials-Page 3

PACKAGE MATERIALS INFORMATION

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM258DR LM258DR LM258DRG3 LM258DRG3 LM258DRG4 LM258DRG4 LM2904AVQDR LM2904AVQDRG4 LM2904AVQPWR LM2904AVQPWRG4 LM2904BAIDR LM2904BIDR LM2904DGKR LM2904DGKR LM2904DR LM2904DR LM2904DR LM2904DR LM2904DRG3 LM2904DRG3 LM2904DRG4 LM2904DRG4 LM2904PWR LM2904PWR LM2904PWRG3 LM2904PWRG4-JF LM2904QDR LM2904VQDR LM2904VQPWR LM2904VQPWRG4 LM358ADGKR LM358ADR LM358ADR LM358ADR LM358ADR LM358ADRG4 LM358ADRG4 LM358APWR LM358APWR LM358APWRG4 LM358BAIDR LM358BIDR LM358BIPWR LM358DGKR SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP SOIC SOIC VSSOP VSSOP SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP TSSOP TSSOP SOIC SOIC TSSOP TSSOP VSSOP SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP TSSOP SOIC SOIC TSSOP VSSOP D D D D D D D D PW PW D D DGK DGK D D D D D D D D PW PW PW PW D D PW PW DGK D D D D D D PW PW PW D D PW DGK 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 2500 2500 2500 2500 2500 2500 2500 2500 2000 2000 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2000 2000 2000 2000 2500 2500 2000 2000 2500 2500 2500 2500 2500 2500 2500 2000 2000 2000 2500 2500 2000 2500 333.2 340.5 333.2 364.0 340.5 367.0 340.5 340.5 367.0 367.0 340.5 340.5 358.0 364.0 364.0 340.5 367.0 333.2 333.2 364.0 367.0 340.5 364.0 367.0 364.0 367.0 350.0 340.5 367.0 367.0 364.0 367.0 364.0 340.5 333.2 367.0 340.5 367.0 364.0 367.0 340.5 340.5 367.0 358.0 345.9 338.1 345.9 364.0 338.1 367.0 338.1 338.1 367.0 367.0 338.1 338.1 335.0 364.0 364.0 338.1 367.0 345.9 345.9 364.0 367.0 338.1 364.0 367.0 364.0 367.0 350.0 338.1 367.0 367.0 364.0 367.0 364.0 338.1 345.9 367.0 338.1 367.0 364.0 367.0 338.1 338.1 367.0 335.0 28.6 20.6 28.6 27.0 20.6 35.0 20.6 20.6 35.0 35.0 20.6 20.6 35.0 27.0 27.0 20.6 35.0 28.6 28.6 27.0 35.0 20.6 27.0 35.0 27.0 35.0 43.0 20.6 35.0 35.0 27.0 35.0 27.0 20.6 28.6 35.0 20.6 35.0 27.0 35.0 20.6 20.6 35.0 35.0 Pack Materials-Page 4

Device

Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM358DGKR LM358DR LM358DR LM358DR LM358DR LM358DRG3 LM358DRG3 LM358DRG4 LM358DRG4 LM358PWR LM358PWR LM358PWRG3 LM358PWRG4 LM358PWRG4-JF VSSOP SOIC SOIC SOIC SOIC SOIC SOIC SOIC SOIC TSSOP TSSOP TSSOP TSSOP TSSOP DGK D D D D D D D D PW PW PW PW PW 8 8 8 8 8 8 8 8 8 8 8 8 8 8 2500 2500 2500 2500 2500 2500 2500 2500 2500 2000 2000 2000 2000 2000 364.0 364.0 367.0 340.5 333.2 333.2 364.0 340.5 367.0 367.0 364.0 364.0 367.0 367.0 364.0 364.0 367.0 338.1 345.9 345.9 364.0 338.1 367.0 367.0 364.0 364.0 367.0 367.0 27.0 27.0 35.0 20.6 28.6 28.6 27.0 20.6 35.0 35.0 27.0 27.0 35.0 35.0

SCALE 2.800

PACKAGE OUTLINE

D0008A

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

.228-.244 TYP [5.80-6.19]

PIN 1 ID AREA

SEATING PLANE

.004 [0.1] C

6X .050

[1.27]

.189-.197 [4.81-5.00] NOTE 3

2X .150 [3.81]

4X (0 -15 )

.150-.157 [3.81-3.98] NOTE 4

.069 MAX

[1.75]

8X .012-.020 [0.31-0.51]

.010 [0.25] C A B

.005-.010 TYP [0.13-0.25]

4X (0 -15 )

SEE DETAIL A

.010 [0.25]

0 - 8

.016-.050 [0.41-1.27]

.004-.010 [0.11-0.25]

(.041) [1.04]

DETAIL A TYPICAL

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed .006 [0.15] per side.

4. This dimension does not include interlead flash.

5. Reference JEDEC registration MS-012, variation AA.

EXAMPLE BOARD LAYOUT

D0008A

8X (.061 )

[1.55]

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

SYMM

SEE DETAILS

8X (.024)

[0.6]

SYMM

(R.002 ) TYP [0.05]

6X (.050 )

[1.27]

(.213) [5.4]

LAND PATTERN EXAMPLE EXPOSED METAL SHOWN

SCALE:8X

METAL

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER SOLDER MASK

EXPOSED METAL

.0028 MAX [0.07]

ALL AROUND NON SOLDER MASK

DEFINED

EXPOSED METAL

.0028 MIN [0.07]

ALL AROUND SOLDER MASK DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

EXAMPLE STENCIL DESIGN

D0008A

SOIC - 1.75 mm max height SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

SYMM

8X (.024)

[0.6]

SYMM

(R.002 ) TYP [0.05]

6X (.050 )

[1.27]

(.213) [5.4]

NOTES: (continued)

BASED ON .005 INCH [0.125 MM] THICK STENCIL SCALE:8X

SOLDER PASTE EXAMPLE

4214825/C 02/2019

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have

alternate design recommendations.

9. Board assembly site may have different recommendations for stencil design.

PACKAGE OUTLINE

PW0008A

A TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE

6.6 6.2 TYP PIN 1 ID C SEATING PLANE 0.1 C AREA 8 6X 0.65 2X 1.95 1 3.1 2.9 NOTE 3 4 5 B 4.5 4.3 NOTE 4 0.30 8X 0.19 0.1 C A B 1.2 MAX SEE DETAIL A (0.15) TYP 0.25 GAGE PLANE 0 - 8 0.75 0.50 0.15 0.05 DETAIL A TYPICAL

4221848/A 02/2015 NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side. 5. Reference JEDEC registration MO-153, variation AA.

EXAMPLE BOARD LAYOUT

PW0008A

TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE

8X (0.45)

8X (1.5)

SYMM

(R0.05) TYP

6X (0.65)

SYMM

SOLDER MASK OPENING

(5.8)

LAND PATTERN EXAMPLE

SCALE:10X

METAL

METAL UNDER SOLDER MASK

SOLDER MASK OPENING

0.05 MAX ALL AROUND

0.05 MIN ALL AROUND SOLDER MASK DEFINED

NON SOLDER MASK DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4221848/A 02/2015

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

EXAMPLE STENCIL DESIGN

PW0008A

8X (0.45)

TSSOP - 1.2 mm max height SMALL OUTLINE PACKAGE

8X (1.5) 1

SYMM

(R0.05) TYP

8 SYMM

6X (0.65)

NOTES: (continued)

(5.8)

BASED ON 0.125 mm THICK STENCIL

SCALE:10X

SOLDER PASTE EXAMPLE

4221848/A 02/2015

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TI运算放大器LM2904PWR,LM2904PT - 图文

LM2904PWR是一款双通道高增益频率补偿运算放大器，设计用于在很宽的电压范围内采用单电源或分离电源工作。运算放大器，双路，700kHz，2个放大器，0.3V/μs，±1.5V至±13V，TSSOP，8个指标LM2904PWR/LM2904PT1特性?

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TI运算放大器LM2904PWR,LM2904PT - 图文

TI运算放大器LM2904PWR,LM2904PT - 图文

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