Influences of different oxidants on the characteristics of HfAlOx films deposited by atomi

Influences of different oxidants on the

characteristics of HfAlOx films deposited by atomic

layer deposition

Fan Ji-Bin;Liu Hong-Xia;Ma Fei;Zhuo Qing-Qing;Hao Yue

【期刊名称】《中国物理：英文版》 【年(卷),期】2013(022)002

【摘要】A comparative study of two kinds of oxidants (H2O and O3) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlOx) films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated. 【总页数】5页(487-491) 【关键词】

【作者】Fan Ji-Bin;Liu Hong-Xia;Ma Fei;Zhuo Qing-Qing;Hao Yue

【作者单位】School of Microelectronics.Key Laboratory of Wide Band-