Silicon PNP SMD triode
1?base 2?emitter 3?collectorencapsulation mode?SOT-23 Classification of hFE?1?RankRangeMarking
L100-200
2A
H200-300
Ouline example
Maximum ratings(Ta=25? unless otherwise noted)
ParameterCollector-Base Breakdown VoltageSymbolVCBOVCEOVEBOICPCTJTstgValue-40-40-6-200225150UnitVVVmAmW??Collector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector CurrentCollector Power DissipationJunction TemperatureStorage Temperature???????????????????????Electrical Characteristics (Ta=25? unless otherwise noted)
Parameter
Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cutoff CurrentCollector Cutoff CurrentEmitter Cutoff Current
Symbol
VCBOVCEOVEBOICBOICEXIEBOHFE(1)
Test Condition
IC=-100uA IE=0IC=-1mA IB=0IE=-100uA IC=0VCB=-40V IE=0VCB=-30V VEB(off) =-3V
VCE=-5V IB=0VCE=-1V IC=-10mAVCE=-1V IC=-50mAVCE=-1V IC=-100mAIC=-10mA IB=-1mAIC=-50mA IB=-5mAIC=-10mA IB=-1mAIC=-50mA IB=-5mA VCE=-20V IC=-10mA
f=100MHz
Min
-40-40-6
MaxUnit
VVV
-100-50-100
1006030
-0.2-0.2-0.85-0.95
250
300300
nAnAnA
DC Current GainHFE(2)HFE(3)
Collector-Emitter Saturation VoltageVCE(sat)
VVVVMHz
2017-05/17REV:OCollector-Base Saturation Voltagetransition frequency
VBE(sat)
fT
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MEMORY存储芯片MMBT3904中文规格书 - 图文
