TPCS8205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
Unit: mm
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
z Small footprint due to small and thin package
z Low drain-source ON resistance: RDS (ON) = 30 m? (typ.) z High forward transfer admittance: |Yfs| = 10 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) z Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit Drain-source voltage
VDSS
20 V 20 V ±12 V 5 20
A
Drain-gate voltage (RGS = 20kΩ) VDGR Gate-source voltage Drain curren
D C
(Note 1)
VGSS ID
JEDEC JEITA
― ―
Pulse (Note 1) IDP
Single-device
PD (1) 1.1 operation Drain power
(Note 3a) dissipation
W
(t = 10s) Single-device value (Note 2a) PD(2) 0.5 at dual operation
(Note 3b) Single-device
PD (1) 0.6 operation Drain power
(Note 3a) dissipation
W
(t = 10s) Single-device value (Note 2b) PD (2) 0.35 at dual operation
(Note 3b) Single pulse avalanche energy
32.5 mJ EAS
(Note 4) Avalanche current
Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range
IAR EAR
TOSHIBA 2-3R1E Weight: 0.035 g (typ.)
Circuit Configuration
5 A 0.05 mJ Tch 150 °C Tstg
?55~150 °C Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
12007-01-16
TPCS8205 Thermal Characteristics
Characteristics Symbol MaxUnit Single-device operation
(Note 3a)
Rth (ch-a) (1)Rth (ch-a) (2)Rth (ch-a) (1)Rth (ch-a) (2)
114
Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at
dual operation
(Note 3b)
250
°C/W
208
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
357
Marking (Note 6)
Part No. (or abbreviation code)S8205 Lot No.A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2:
a) Device mounted on a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8 (unit: mm)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8 (unit: mm)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25°C (Initiaal), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ○ on lower right of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture (The last digit of a year)
22007-01-16
TPCS8205 Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
Gate leakage current Drain cut-OFF current
Drain-source breakdown voltage Gate threshold voltage
IGSS IDSS V (BR) DSSV (BR) DSX
Vth RDS (ON)
Drain-source ON resistance
RDS (ON) RDS (ON)
Forward transfer admittance Input capacitance
Reverse transfer capacitance Output capacitance
Rise time
VGS = ±10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = ?12 V
? ? 20 8
? ±10μA
? 10 μA ? ?
? ?
V
VDS = 10 V, ID = 200 μA 0.5 ? 1.2 V VGS = 2.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VGS = 4 V, ID = 4 A
? 60 90 m?? 40 60 ? 30 45 5
10
? S |Yfs| VDS = 10 V, ID = 2.5 A Ciss Crss Coss tr
VDS = 10 V, VGS = 0 V, f = 1 MHz
? 760 ? pF ? 110 ? pF ? 130 ? pF ? 7 ?
Turn-ON time
Switching time
Fall time
ton
? 13 ?
ns
tf
? 13 ?
Turn-OFF time
Total gate charge
(gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge
toff
Qg Qgs Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
? 49 ?
? 11 ? nC ? 8 ? nC ? 3 ? nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Drain reverse current
Pulse (Note 1) IDRP VDSF
Test Condition
Min Typ. MaxUnit
— — — 20 A IDR = 5 A, VGS = 0 V
— — ?1.2
V
Forward voltage (diode)
32007-01-16
TPCS8205
42007-01-16
TPCS8205
PD – Ta
2 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s
DRAIN POWER DISSIPATION PD (W) 1.6 1.2 (1) 0.8 (3) 0.4 (2) (4) 0 0
40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
52007-01-16
TPCS8205规格
