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SEMICONDUCTOR DEVICE

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SEMICONDUCTOR DEVICE

申请(专利)号: US201916392655

专利号: US2020006323A1 主分类号: H01L27/06 申请权利人: FUJI ELECTRIC

CO., LTD. 公开国代码: US 优先权国家: JP

申请日: 2019-04-24 公开公告日: 2020-01-02

分类号: H01L27/06;

H02M3/158 发明设计人: YASUAKI SAKAI 申请国代码: US

优先权: 20180629 JP 2018-124847

摘 要 附 图:

摘 要:

Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor

provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET. 主权项:

1. A semiconductor device comprising: a first MOSFET;

权 利 要 求 说 明 书

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说 明 书

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