SEMICONDUCTOR DEVICE
申请(专利)号： US201916392655
专利号： US2020006323A1 主分类号： H01L27/06 申请权利人： FUJI ELECTRIC
CO., LTD. 公开国代码： US 优先权国家： JP
申请日： 2019-04-24 公开公告日： 2020-01-02
分类号： H01L27/06;
H02M3/158 发明设计人： YASUAKI SAKAI 申请国代码： US
优先权： 20180629 JP 2018-124847
摘 要 附 图：
摘 要：
Provided is a semiconductor device including a first MOSFET; a second MOSFET; a first resistor provided between a gate terminal of the first MOSFET and a source terminal of the second MOSFET; a second resistor
provided between a source terminal of the first MOSFET and a gate terminal of the second MOSFET; a first diode provided in series with the first resistor between the gate terminal of the first MOSFET and the source terminal of the second MOSFET; and a second diode provided in series with the second resistor between the source terminal of the first MOSFET and the gate terminal of the second MOSFET. 主权项：
1. A semiconductor device comprising: 权 利 要 求 说 明 书 【SEMICONDUCTOR DEVICE】的权利说明书内容是......请下载后查看 说 明 书 【SEMICONDUCTOR DEVICE】的说明书内容是......请下载后查看
SEMICONDUCTOR DEVICE
