SEMICONDUCTOR DEVICE
申请(专利)号： JP19900013439
专利号： JPH02235367A 主分类号： H01L25/18
申请权利人： SIEMENS AG 公开国代码： JP 优先权国家： EP
摘 要：
PURPOSE: To protect a semiconductor structure against damage by a method wherein a ductile alloy layer is provided onto the lower main surface of a device composed of two semiconductor bodies whose upper main surface and lower main surface are thermally connected together. CONSTITUTION: A
semiconductor device is formed through such a manner that semiconductor body 3 is provided and bonded onto a metal base plate 1 with thermally conductive
adhesive agent. A ductile metal laver 8 of aluminum, indium or gold is provided onto the lower main surface of a semiconductor body 5, and the
semiconductor body 5 is bonded to the upper surface 4 through the intermediary of the semiconductor body 3 through the intermediary of an adhesive layer 7. The layer 7 is formed thin so as not to stop a heat flow from flowing to the semiconductor body 5, and the
申请日： 1990-01-22 公开公告日： 1990-09-18
分类号： H01L25/18;
H01L21/52; H01L23/495; H01L25/065; H01L25/07; H01L25/16 发明设计人： PEETAA FUUBAA 申请国代码： JP
优先权： 19890126 EP
89101355
摘 要 附 图：
semiconductor bodies 3 and 5 are sealed up in a resin package 9 as pressed. By this setup, a vertical force applied to the semiconductor bodies 3 and 5 when a load is varied is canceled by the layer 8, so that a device of this constitution can be protected against damage. 主权项：
权 利 要 求 说 明 书
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SEMICONDUCTOR DEVICE
