SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

申请(专利)号： US201916704127

专利号： US2020111899A1 主分类号： H01L29/66

申请权利人： SEMICONDUCTO

R

MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR

MANUFACTURING INTERNATIONAL (BEIJING)

CORPORATION 公开国代码： US 优先权国家： CN

摘 要：

Semiconductor devices and fabrication methods are provided. A semiconductor device includes a substrate, a source and drain material layer formed on the

substrate. The source and drain material layer contains a first trench there-through. The semiconductor device further includes a mask layer formed on the

source and drain material layer containing a second trench there-through. The second trench has a cross-section area larger than the first trench and covers the

申请日： 2019-12-05 公开公告日： 2020-04-09

分类号： H01L29/66;

H01L27/11556; H01L29/78; H01L29/417; H01L29/786; H01L29/423 发明设计人： HAI YANG ZHANG;

ZHUO FAN CHEN

申请国代码： US

优先权： 20170505 CN

201710310410.X

摘 要 附 图：

first trench. The semiconductor device further includes a channel material layer conformally formed on a bottom and sidewalls of each of the first trench and the second trench and a gate structure conformally formed on the channel material layer, on the bottom and the sidewalls of each of the first trench and the second trench. The gate structure has a recess and the recess has a symmetrical step structure. 主权项：

1. A semiconductor device, comprising: a substrate;

权 利 要 求 说 明 书

【SEMICONDUCTOR DEVICE】的权利说明书内容是......请下载后查看