Combined frequency-and time-domain photocarrier radiometry characterization of ion-implant

Combined frequency-and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

Ren Sheng-Dong;Li Bin-Cheng;Gao Li-Feng;Wang Qian

【期刊名称】《中国物理：英文版》 【年(卷),期】2013(022)005

【摘要】A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+,P+,and As+ ion implantation at doses ranging from 1 × l011 cm-2 to 1 × 1016 cm-2.The implantation dose dependence of the PCR amplitude,the frequency dependencies of the PCR amplitude and phase,as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples.The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.

【总页数】5页(462-466) 【关键词】

【作者】Ren Sheng-Dong;Li Bin-Cheng;Gao Li-Feng;Wang Qian

【作者单位】Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China ;University of the Chinese Academy of