SEMICONDUCTOR DEVICE
申请(专利)号： EP20140862551
专利号： EP3076435A1 主分类号： H01L29/786
申请权利人： HITACHI
AUTOMOTIVE SYSTEMS, LTD. 公开国代码： EP 优先权国家： JP
摘 要：
To provide a high-withstand-voltage lateral semiconductor device in which ON-resistance or drain current density is uniform at an end portion and a center portion of the device in a gate width
direction. A lateral N-type MOS transistor 11 formed on an SOI substrate includes a trench isolation structure 10b filled with an insulating film at an end portion of the transistor. An anode region 6 of a diode 12 is provided adjacent to a P-type body region 1 of the transistor through the trench isolation structure 10b and a
cathode region 15 of the diode 12 is also provided adjacent to an N-type drain-drift region 4 of the transistor through the trench isolation structure 10b so as to cause electric field to be applied to the trench isolation structure 10b to be zero when a voltage is applied across the
申请日： 2014-10-22 公开公告日： 2016-10-05
分类号： H01L29/786;
H01L21/336; H01L21/76; H01L29/06; H01L29/861; H01L29/868 发明设计人： WADA,
SHINICHIROU 申请国代码： EP
优先权： 20131112 JP
2013233622
摘 要 附 图：
transistor. 主权项：
A lateral semiconductor device formed on a semiconductor substrate, comprising:
权 利 要 求 说 明 书
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SEMICONDUCTOR DEVICE
