FINFET STRUCTURE WITH COMPOSITE GATE HELMET
申请(专利)号： US201916704327
专利号： US2020111880A1 主分类号： H01L29/423
申请权利人： TAIWAN
SEMICONDUCTOR
MANUFACTURING CO., LTD. 公开国代码： US 优先权国家： US
摘 要：
A semiconductor device includes first and second gate stack, a source/drain
contact, and a first gate capping structure. The first gate stack and the second gate stack are over a semiconductor fin. The source/drain contact extends laterally from a first gate spacer of the first gate stack to a second gate spacer of the
second gate stack, and extends vertically from a source/drain region in the semiconductor fin to above the source/drain region. The first gate capping structure is atop the first gate stack, and has a greater thickness on the first gate spacer of the first gate stack
申请日： 2019-12-05 公开公告日： 2020-04-09
分类号： H01L29/423;
H01L29/78; H01L29/66; H01L29/417 发明设计人： SHIH-WEI WANG
申请国代码： US
优先权： 20191205 US
201916704327; 20190715 US 201916511089; 20170927 US 201715716722; 20170331 US 201762479430
摘 要 附 图：
than on a gate metal of the first gate stack. The thickness is measured in a direction perpendicular to a top surface of the first gate stack. 主权项：
1. A semiconductor device, comprising:
权 利 要 求 说 明 书
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FINFET STRUCTURE WITH COMPOSITE GATE HELMET
