APT20M20LLL中文资料
元器件交易网 *****0B2*****M20LLL 200V100A0.020W TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power *****. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering Rand QDS(ON)g. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT'spatented metal gate structure. Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package ***** *****
All Ratings: TC = 25°C unless otherwise specified. SymbolParameter *****0
*****SDrain-Source Voltage 200
VoltsIDContinuous
Drain
Current
@
TC
=
25°C100*****GS±30VICALAmps
Gate-Source Voltage ContinuousGSMGate-Source Voltage Transient
±40VoltsPTotal Power Dissipation @ TC = 25°C570WattsDLinear Derating Factor
4.56W/°CTJ,TSTG
Operating and Storage Junction Temperature Range *****N-55 to 150 TLLead
Temperature:
0.063“
from
Case
for
10
Sec.300°CIAR(Repetitive and Non-Repetitive) 100Amps**********50 EAS IN FO2500 mJ
STATIC *****CAL **********S
SymbolCharacteristic / Test Conditions
**********VDSSDrain-Source Breakdown Voltage (VGS = 0V, ID = 250A)200VoltsID(on)On State Drain Current (VDS ID(on) x RDS(on) Max, VGS = 10V)100 Amps
RDS(on)Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.])0.020OhmsIZero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25DSSZero Gate Voltage Drain Current (VADS = 0.8 VDSS, VGS = 0V, TC = 125°C)250IGSSGate-Source Leakage Current (VGS = ±30V, VDS = 0V)±100 nAVGS(th)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 5 Volts
*****: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website -
USA405 S.W. Columbia StreetBend, Oregon *****-1035Phone: (541) 382-8028FAX: (541) 388-0364EUROPE Chemin de Magret F-***** Merignac - France Phone: (33)***-*****5 FAX: (33)***-*****1 1
002-1 -veR 3107-050 元器件交易网 ***** **********S
SymbolCissCossCrssgQgsQgdtd(on)trtd(off)tf CharacteristicInput CapacitanceOutput Capacitance Reverse Transfer CapacitanceTest Conditions VGS = 0VVDS = 25Vf = 1 MHzVGS = 10V MIN
*****0 B2LL - LLL TYP MAX UNIT
***-*************** nCpF
Gate-Source ChargeTurn-on Delay TimeRise Time Gate-Drain (“Miller“) Charge Turn-off Delay TimeFall Time
SOURCE-DRAIN DIODE ***** AND **********S Symbol*****Dt rrQ rr
Characteristic / Test Conditions
Continuous Source Current (Body Diode)GS = 0V, IS = -ID[Cont.])
APT20M20LLL中文资料
