JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB20N07 N-Channel Power MOSFET 20VV(BR)DSS n)MAX R DS(o D I WB3.3×3.3-8L PDFN7.0mΩ@4.5V
30A
DESCRIPTION The CJAB20N07 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES ????Battery switchLoad switchHigh density cell design for ultra low RDS(ON)Fully characterized avalanche voltage andcurrentAPPLICATIONS ?SMPS and general purpose applications?Uninterruptible Power SupplyEQUIVALENT CIRCUIT D87???Good stability and uniformity with high EASExcellent package for good heat dissipationSpecial process technology for high ESDcapability?Hard switched and high frequency circuitsMARKING 20N07 = Part No. 20N07
XX
D6D5DSolid dot=Pin1 indicator XX=Date Code 1234SSSGMAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) (1).EAS condition: VDD=15V,L=0.1mH, RG=25?, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt Symbol VDS VGS ID IDM EAS(1) PD RθJA TJ Tstg TL Limit 20 ±10 30 135 420341.67150 -55 ~+150 260 Unit V V A A mJ W ℃/W ℃ ℃℃www.jscj-elec.com
1 Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
T =25℃ unless otherwise specified aParameter Off characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current On characteristics (note1) Gate-threshold voltage Static drain-source on-sate resistance Forward transconductance Dynamic characteristics (note 2)Input capacitance Output capacitance Reverse transfer capacitance Switching characteristics (note 2) Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current Notes: 1.2.Pulse Test : Pulse Width≤300μs, duty cycle ≤2%.Guaranteed by design, not subject to production.VSD IS ISM VGS =0V, IS=5A
1.2 26 120
V A A Qg Qgs Qgd td(on) tr td(off) tf VDS=10V,RL=0.75Ω, VGS=4V,RG=3Ω VGS=4.5V, VDS=10V, ID=10A
30 1.8 3.331 14 64 22
ns nC Ciss Coss Crss VDS =8V,VGS =0V, f =1MHz
1218 236 226
pF VGS(th) RDS(on)gFS
Symbol Test Condition Min Typ Max Unit V(BR) DSSIDSS IGSS VGS = 0V, ID =250μA VDS =16V, VGS =0V VDS =0V, VGS =±4.5V
20
1 ±100V μA nA VDS =VGS, ID =250μA VGS =4.5V, ID =10A VGS =2.5V, ID =10A VDS =5V, ID =10A
0.4 0.76.3 8.222
1.5 7.0 10.5
Vm?m?S www.jscj-elec.com
2Rev. - 1.0
Typical CharacteristicsOutput Charact eristics2012 Transfer C haracteristicsVDS=3VPulsed10Ta=25℃Pulsed16VGS=2.5V,3V,4V,5VDRAIN CURRENT ID (A)VGS=2V12DRAIN CURRENT ID (A)8Ta=25℃Ta=100℃684VGS=1.5V420013400.00.51.01.52.02.5DRAIN TO SOURCE VOLTAGE VDS (V)GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)—— ID
1065
RDS(ON)—— VGSPulsed55
Ta=25℃PulsedON-RESISTANCE RDS(ON) (m?)ON-RESISTANCE RDS(ON) (m?)ID=3A45
8VGS=2.5V35
25
Ta=100℃6VGS=4.5V15
Ta=25℃5
1234567013GS
4DRAIN CURRENT ID (A)
GATE GATE TO SOURCE VOLTAGE(V)
IS —— VSD 81.2
Threshold Voltage
Pulsed1.0
1THRESHOLD VOLTAGE VTH (V)SOURCE CURRENT IS (A)0.8
ID=250uA0.6
Ta=100℃0.1Ta=25℃0.4
0.2
0.010.0
0.20.40.60.81.0
SD
1.21.41.6
0.025
5075100125
SOURCE TO DRAIN VOLTAGEVOLTA(V)
JUNCTION TEMPERATURE Tj (℃)
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3Rev. - 1.0
SymbolAA1A2DD1EE1E2beLL1L2L3HθDimensions In MillimetersMin.Max.0.6500.8500.152 REF.0~0.052.9003.1002.3002.6002.9003.1003.1503.4501.5351.9350.2000.4000.5500.7500.3000.5000.1800.4800~0.1000~0.1000.3150.5159°13°Dimensions In InchesMin.Max.0.0260.0330.006 REF.0~0.0020.1140.1220.0910.1020.1140.1220.1240.1360.0600.0760.0080.0160.0220.0300.0120.0200.0070.0190~0.0040~0.0040.0120.0209°13°NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.
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4Rev. - 1.0
CJAB20N07 - 图文
