Degradation characteristics and mechanism of PMOSFETs under NBT-PBT-NBT stress

Degradation characteristics and mechanism of

PMOSFETs under NBT-PBT-NBT stress

Liu Hong-Xia; Li Zhong-He; Hao Yue

【期刊名称】《《中国物理：英文版》》 【年(卷),期】2007(016)005

【摘要】Degradation characteristics of PMOSFETs under negative bias temperature-positive bias temperature-negative bias temperature (NBT-PBT-NBT) stress conditions are investigated in this paper. It is found that for all device parameters, the threshold voltage has the largest shift under the first NBT stress condition. When the polarity of gate voltage is changed to positive, the shift of device parameters can be greatly recovered. However, this recovery is unstable. The more severe degradation appears soon after reapplication of NBT stress condition. The second NBT stress causes in linear drain current to degrade greatly, which is different from that of the first NBT stress. This more severe parameter shift results from the wear out of silicon substrate and oxide interface during the first NBT and PBT stress due to carrier trapping/detrapping and hydrogen related species diffusion. 【总页数】5页(1445-1449)

【关键词】ultra deep submicron PMOSFETs; negative bias temperature instability (NBTI); positive bias temperature instability (PBTI); interface traps

【作者】Liu Hong-Xia; Li Zhong-He; Hao Yue

【作者单位】Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China 【正文语种】中文 【中图分类】O4 【文献来源】

https://www.zhangqiaokeyan.com/academic-journal-cn_chinese-physics-b_thesis/0201274913374.html 【相关文献】

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