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MEMORY存储芯片MAX202ECPE中文规格书 - 图文

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找MEMORY、二三极管上美光存储 Absolute Maximum Ratings

VCC..........................................................................-0.3V to +6VV+................................................................(VCC- 0.3V) to +14VV-............................................................................-14V to +0.3VInput Voltages

T_IN............................................................-0.3V to (V+ + 0.3V)R_IN...................................................................................±30VOutput Voltages

T_OUT.................................................(V- - 0.3V) to (V+ + 0.3V)R_OUT......................................................-0.3V to (VCC+ 0.3V)Short-Circuit Duration, T_OUT....................................ContinuousContinuous Power Dissipation (TA= +70°C)

16-Pin Plastic DIP (derate 10.53mW/°C above +70°C)....842mW16-Pin Narrow SO (derate 8.70mW/°C above +70°C).....696mW16-Pin Wide SO (derate 9.52mW/°C above +70°C)......762mW16-Pin TSSOP (derate 9.4mW/°C above +70°C)...........755mW

20-Pin Plastic DIP (derate 11.11mW/°C above +70°C)...889mW20-Pin SO (derate 10.00mW/°C above +70°C).............800mW24-Pin Narrow Plastic DIP

(derate 13.33mW/°C above +70°C) ...............................1.07W24-Pin Wide Plastic DIP

(derate 14.29mW/°C above +70°C)................................1.14W24-Pin SO (derate 11.76mW/°C above +70°C).............941mW24-Pin SSOP (derate 8.00mW/°C above +70°C)..........640mW28-Pin SO (derate 12.50mW/°C above +70°C)....................1W28-Pin SSOP (derate 9.52mW/°C above +70°C)..........762mWOperating Temperature Ranges

MAX2_ _EC_ _.....................................................0°C to +70°CMAX2_ _EE_ _...................................................-40°C to +85°CStorage Temperature Range.............................-65°C to +165°CLead Temperature (soldering, 10s).................................+300°C

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functionaloperation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure toabsolute maximum rating conditions for extended periods may affect device reliability.Electrical Characteristics

(VCC= +5V ±10% for MAX202E/206E/208E/211E/213E/232E/241E; VCC= +5V ±5% for MAX203E/205E/207E; C1–C4 = 0.1μF forMAX202E/206E/207E/208E/211E/213E; C1–C4 = 1μF for MAX232E/241E; TA= TMINto TMAX; unless otherwise noted. Typical valuesare at TA= +25°C.)

PARAMETERDC CHARACTERISTICSMAX202E/203EMAX205E–208EVCCSupply CurrentICCNo load, TA= +25°CMAX211E/213EMAX232EMAX241EMAX205E/206EShutdown Supply CurrentLOGICInput Pullup CurrentInput Leakage CurrentInput Threshold LowVILT_IN = 0V (MAX205E–208E/211E/213E/241E)T_IN = 0V to VCC(MAX202E/203E/232E)T_IN; EN, SHDN(MAX213E) or EN, SHDN (MAX205E–208E/211E/241E)T_INInput Threshold HighVIHEN, SHDN(MAX213E) or EN, SHDN(MAX205E–208E/211E/241E)R_OUT; IOUT= 3.2mA (MAX202E/203E/232E) orIOUT= 1.6mA (MAX205E/208E/211E/213E/241E)R_OUT; IOUT= -1.0mAEN= VCC, EN = 0V, 0V ≤ ROUT≤ VCC,MAX205E–208E/211E/213E/241E outputs disabled3.5VCC - 0.4±0.05±102.02.40.4V15200±100.8μAμAVTA= +25°C, Figure 1MAX211E/241EMAX213E811145711151520201015101050μAmASYMBOLCONDITIONSMINTYPMAXUNITSOutput-Voltage LowOutput-Voltage HighOutput Leakage CurrentVOLVOHVVμA Integrated | 2

MAX202E–MAX213E,MAX232E/MAX241E

RC 1MΩRD 1500ΩCHARGE-CURRENT-DISCHARGELIMIT RESISTORRESISTANCEHIGH-VOLTAGECDEVICEsSTORAGEDC100pFCAPACITORUNDERTESTSOURCEFigure 6a. Human Body ESD Test ModelRC 50MΩ to 100MΩRD 330ΩCHARGE-CURRENT-DISCHARGELIMIT RESISTORRESISTANCEHIGH- VOLTAGECDEVICEsSTORAGEDC150pFCAPACITORUNDERTESTSOURCEFigure 7a. IEC1000-4-2 ESD Test Modelest, which is then discharged into the test devicethrough a 1.5kΩ resistor.

IEC1000-4-2

The IEC1000-4-2 standard covers ESD testing and per-formance of finished equipment; it does not specifically refer to integrated circuits. TheMAX202E/MAX203E–MAX213E, MAX232E/MAX241Ehelp you design equipment that meets level 4 (the high-est level) of IEC1000-4-2, without the need for addition-al ESD-protection components.

The major difference between tests done using theHuman Body Model and IEC1000-4-2 is higher peakcurrent in IEC1000-4-2, because series resistance islower in the IEC1000-4-2 model. Hence, the ESD with-stand voltage measured to IEC1000-4-2 is generallylower than that measured using the Human Body

5V RS-232 Transceivers

±15kV ESD-Protected, IP 100%I90%rPEAK-TO-PEAK RINGING(NOT DRAWN TO SCALE)AMPERES36.8

MEMORY存储芯片MAX202ECPE中文规格书 - 图文

找MEMORY、二三极管上美光存储AbsoluteMaximumRatingsVCC..........................................................................-0.3Vto+6VV+.....................................................
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