SEMICONDUCTOR DEVICE
申请(专利)号： US201313863178
专利号： US2013307065A1 主分类号： H01L27/088 申请权利人： SUMITOMO
ELECTRIC
INDUSTRIES, LTD. 公开国代码： US 优先权国家： JP
摘 要：
The substrate is made of a compound semiconductor and has a plurality of first recesses, each of which opens at one main surface thereof and has a first side wall surface. The gate insulating film is disposed on and in contact with the first side wall surface. The gate electrode is disposed on and in contact with the gate insulating film. The substrate include: a source region having first conductivity type and disposed to face itself with a first recess interposed therebetween, when viewed in a cross section along the thickness direction; and a body region having second conductivity type and
disposed to face itself with the first recess interposed therebetween. Portions of the source region facing each other are connected to each other in a region interposed between the first recess and another first recess adjacent to the first recess, when viewed in a plan view. 主权项：
申请日： 2013-04-15 公开公告日： 2013-11-21
分类号： H01L27/088 发明设计人： TAKEYOSHI
MASUDA;
TORU HIYOSHI; KEIJI WADA 申请国代码： US
优先权： 20120518 JP 2012-114126
摘 要 附 图：
1. A semiconductor device comprising:
权 利 要 求 说 明 书
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SEMICONDUCTOR DEVICE
